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| 3VD297650YL 3VD297650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION 3VD297650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Advanced termination scheme to provide enhanced voltage-blocking capability. Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode The chips may packaged in TO-220 type and the typical equivalent product is 4N65. The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. Die size: 3.2mm*2.76mm. Chip Thickness: 30020m. Top metal: Al, Backside Metal: Ag. CHIP TOPOGRAPHY ABSOLUTE MAXIMUM RATINGS (Tamb=25C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (TO-220 Package) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID PD TJ Tstg Ratings 650 30 4.0 100 -55+150 -55+150 Unit V V A W C C ELECTRICAL CHARACTERISTICS (Tamb=25C) Parameter Drain -Source Breakdown Voltage Gate Threshold Voltage Drain-Source Leakage Current Static Drain- Source On State Resistance Gate-Source Leakage Current Source-Drain Diode Forward on Voltage Symbol BVDSS VTH IDSS RDS(on) IGSS VFSD Test conditions VGS=0V, ID=250A VGS= VDS, ID=250A VDS=650V, VGS=0V VGS=10V, ID=2.0A VGS=30V, VDS=0V IS=4.0A, VGS=0V Min. 650 2.0 ----Typ. ------Max. -4.0 1.0 3.0 100 1.4 Unit V V A nA V HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2008.10.15 Page 1 of 1 |
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