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| RFG45N06, RFP45N06, RF1S45N06SM Data Sheet January 2002 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA49028. Features * 45A, 60V * rDS(ON) = 0.028 * Temperature Compensating PSPICE(R) Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * 175oC Operating Temperature * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol DRAIN Ordering Information PART NUMBER RFG45N06 RFP45N06 RF1S45N06SM PACKAGE TO-247 TO-220AB TO-263AB BRAND RFG45N06 RFP45N06 F1S45N06 GATE NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, i.e. RF1S45N06SM9A. SOURCE Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE JEDEC TO-263AB GATE SOURCE DRAIN (FLANGE) (c)2002 Fairchild Semiconductor Corporation RFG45N06, RFP45N06, RF1S45N06SM Rev. B RFG45N06, RFP45N06, RF1S45N06SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFG45N06, RFP45N06 RF1S45N06SM 60 60 45 Refer to Peak Current Curve 20 Refer to UIS Curve 131 0.877 -55 to 175 300 260 UNITS V V A V W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RG = 20K) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V (Figure 11) VGS = VDS, ID = 250A (Figure 10) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V (125oC) VGS = 20V ID = 45A, VGS = 10V (Figure 9) VDD = 30V, ID = 45A RL = 0.667, VGS = +10V RG = 3.6 (Figure 13) MIN 60 2 VGS = 0 to 20V VGS = 0 to 10V VGS = 0 to 2V VDD = 48V, ID = 45A, RL = 1.07 Ig(REF) = 1.5mA (Figure 13) TYP 12 74 37 16 125 67 3.7 2050 600 200 MAX 4 1 25 100 0.028 120 80 150 80 4.5 1.14 80 UNITS V V A A nA ns ns ns ns ns ns nC nC nC pF pF pF oC/W oC/W Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(10) Qg(TH) CISS COSS CRSS RJC RJA VDS = 25V, VGS = 0V f = 1MHz (Figure 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Diode Reverse Recovery Time NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current Capability Curve (Figure 5). (c)2002 Fairchild Semiconductor Corporation RFG45N06, RFP45N06, RF1S45N06SM Rev. B SYMBOL VSD trr TEST CONDITIONS ISD = 45A ISD = 45A, dISD/dt = 100A/s MIN - TYP - MAX 1.5 125 UNITS V ns RFG45N06, RFP45N06, RF1S45N06SM Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) ID , DRAIN CURRENT (A) Unless Otherwise Specified 50 40 30 20 10 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE 1 0.5 PDM 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 100 101 FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 400 TJ = MAX RATED SINGLE PULSE TC = 25oC IDM , PEAK CURRENT (A) 103 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: 175 - T C I = I 25 ----------------------- 150 ID , DRAIN CURRENT (A) 100 100s 1ms 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) VDSS(MAX) = 60V 1 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 10ms 100ms DC 100 VGS = 20V VGS = 10V 102 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 40 10-3 10-2 10-1 100 101 102 t, PULSE WIDTH (ms) 103 104 TC = 25oC FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY (c)2002 Fairchild Semiconductor Corporation RFG45N06, RFP45N06, RF1S45N06SM Rev. B RFG45N06, RFP45N06, RF1S45N06SM Typical Performance Curves 300 IAS, AVALANCHE CURRENT (A) Unless Otherwise Specified (Continued) 125 VGS = 10V ID , DRAIN CURRENT (A) VGS = 8V VGS = 7V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC VGS = 6V VGS = 5V VGS = 4.5V 10 0 0 1.5 3 4.5 6 7.5 100 100 STARTING TJ = 25oC 75 10 STARTING TJ = 150oC If R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) 50 25 1 0.01 If R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 0.1 1 tAV, TIME IN AVALANCHE (ms) VDS, DRAIN TO SOURCE VOLTAGE (V) NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING FIGURE 7. SATURATION CHARACTERISTICS IDS(ON) , DRAIN TO SOURCE CURRENT (A) 125 100 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 10 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 15V -55oC 25oC 2.5 175oC 2 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 10V, ID = 45A 75 1.5 50 1 25 0.5 0 0 1 2 3 4 5 6 7 8 9 VGS , GATE TO SOURCE VOLTAGE (V) 0 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 2.0 VGS = VDS, ID = 250A NORMALIZED DRAIN TO SOURCE 2.0 ID = 250A BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.5 1.5 1.0 1.0 0.5 0.5 0 -80 -40 0 40 80 120 160 200 0 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE (c)2002 Fairchild Semiconductor Corporation RFG45N06, RFP45N06, RF1S45N06SM Rev. B RFG45N06, RFP45N06, RF1S45N06SM Typical Performance Curves 4000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD CISS 2000 COSS 1000 CRSS 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) Unless Otherwise Specified (Continued) 60 VDD = BVDSS 45 VDD = BVDSS 7.5 10 VGS, GATE TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 3000 30 0.75 BVDSS 0.75 BVDSS 0.50 BVDSS 0.50 BVDSS 0.25 BVDSS 0.25 BVDSS RL = 1.33 IG(REF) = 1.5mA VGS = 10V 0 20 5.0 15 2.5 0 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) VDS , DRAIN TO SOURCE VOLTAGE (V) NOTE: Refer to Fairchild Application Notes AN7254 and AN7260. FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01 0 tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS (c)2002 Fairchild Semiconductor Corporation RFG45N06, RFP45N06, RF1S45N06SM Rev. B RFG45N06, RFP45N06, RF1S45N06SM Test Circuits and Waveforms VDS RL VDD VDS VGS = 20V VGS + Qg(TOT) Qg(10) VDD VGS VGS = 2V 0 Qg(TH) Ig(REF) 0 VGS = 10V DUT Ig(REF) FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS (c)2002 Fairchild Semiconductor Corporation RFG45N06, RFP45N06, RF1S45N06SM Rev. B RFG45N06, RFP45N06, RF1S45N06SM PSPICE Electrical Model .SUBCKT RFP45N06 2 1 3 REV 1/18/93 *NOM TEMP = +25oC 5 10 DRAIN 2 LDRAIN DBREAK CA 12 8 3.49E-9 CB 15 14 3.8E-9 CIN 6 8 2E-9 DBODY 7 5 DBDMOD DBREAK 5 11DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 66.5 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 LDRAIN 2 5 1E-9 LGATE 1 9 5.65E-9 LSOURCE 3 7 4.13E-9 MOS1 16 6 8 8 MOSMOD M=0.99 MOS2 16 21 8 8 MOSMOD M=0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 5 16 RDSMOD 3.58E-3 RGATE 9 20 0.681 RIN 6 8 1E9 RSOURCE 8 7 RDSMOD 13.6E-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.92 CA ESG + GATE 1 LGATE 9 20 RGATE EVTO + 18 8 6 8 DPLCAP 16 RDRAIN 6 VTO + MOS2 21 MOS1 11 EBREAK 17 18 + DBODY RIN CIN 8 RSOURCE 7 LSOURCE 3 SOURCE 18 RVTO S1A 12 13 8 S1B S2A 14 13 S2B 13 CB 14 + 5 EDS 8 IT 15 17 RBREAK 19 VBAT + + EGS 6 -8 - - .MODEL DBDMOD D (IS=8.2E-13 RS=7.86E-3 TRS1=2.26E-3 TRS2=2.90E-6 CJO=2.07E-9 TT=5.72E-8) .MODEL DBKMOD D (RS=1.93E-1 TRS1=5.13E-4 TRS2=-2.15E-5) .MODEL DPLCAPMOD D (CJO=1.25E-9 IS=1E-30 N=10) .MODEL MOSMOD NMOS (VTO=3.862 KP=55.57 IS=1E-30 N=10 TOX=1 L=1U W=1U) .MODEL RBKMOD RES (TC1=1.12E-3 TC2=-5.18E-7) .MODEL RDSMOD RES (TC1=4.64E-3 TC2=1.58E-5) .MODEL RVTOMOD RES (TC1=-4.27E-3 TC2=-6.55E-6) .MODEL S1AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-6.5 VOFF=-1.7) .MODEL S1BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-1.7 VOFF=-6.5) .MODEL S2AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-3.0 VOFF=2) .MODEL S2BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=2.0 VOFF=-3.0) .ENDS NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; authors, William J. Hepp and C. Frank Wheatley. (c)2002 Fairchild Semiconductor Corporation RFG45N06, RFP45N06, RF1S45N06SM Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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