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| APTDF100H1201G Fast Diode Full Bridge Power Module 3 CR1 5 6 CR2 CR4 4 CR3 1 2 VRRM = 1200V IC = 100A @ Tc = 60C Application * * * * Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features * * * * * * * Benefits * * * * * * * Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration 7 8 9 10 All multiple inputs and outputs must be shorted together 3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10 Absolute maximum ratings Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% 8.3ms TC = 25C TC = 60C TC = 45C Max ratings 1200 120 100 500 A Unit V August, 2007 1-4 APTDF100H1201G - Rev 0 Non-Repetitive Forward Surge Current These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTDF100H1201G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM CT Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Test Conditions IF = 100A IF = 150A IF = 100A Tj = 125C Tj = 25C VR = 1200V Tj = 125C VR = 200V Min Typ 2.4 2.7 1.8 Max 3 Unit V 100 500 110 A pF Dynamic Characteristics Symbol Characteristic trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current IF = 100A VR = 800V di/dt=1000A/s IF = 100A VR = 800V di/dt = 200A/s Test Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C Min Typ 385 480 1055 5240 6 19 210 9.4 70 Max Unit ns nC A ns C A Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 2.5 Typ Max 0.55 175 125 100 4.7 80 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 www.microsemi.com 2-4 APTDF100H1201G - Rev 0 August, 2007 APTDF100H1201G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0 0.00001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 300 IF, Forward Current (A) 250 200 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF, Anode to Cathode Voltage (V) QRR, Reverse Recovery Charge (C) QRR vs. Current Rate Charge TJ=125C VR=800V TJ=25C TJ=125C Trr vs. Current Rate of Charge 600 500 400 300 200 100 0 0 200 400 600 800 1000 1200 -diF/dt (A/s) IRRM vs. Current Rate of Charge 50 A 150 A 100 A TJ=125C VR=800V IRRM, Reverse Recovery Current (A) 12 10 8 6 4 2 80 70 60 50 40 30 20 10 0 200 400 600 800 1000 1200 -diF/dt (A/s) TJ=125C VR=800V 150 A 100 A 50 A 150 A 100 A 50 A 0 200 400 600 800 1000 1200 -diF/dt (A/s) Capacitance vs. Reverse Voltage 800 Max. Average Forward Current vs. Case Temp. 120 100 Duty Cycle = 0.5 TJ=175C C, Capacitance (pF) 400 IF(AV) (A) 80 60 40 20 0 1 10 100 VR, Reverse Voltage (V) 1000 0 25 50 75 100 125 150 175 Case Temperature (C) www.microsemi.com 3-4 APTDF100H1201G - Rev 0 200 August, 2007 600 APTDF100H1201G SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTDF100H1201G - Rev 0 Microsemi reserves the right to change, without notice, the specifications and information contained herein August, 2007 |
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