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Data Sheet DUAL LDO REGULATORS General Description The AP2401 series are dual positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, two error amplifiers, two resistor networks for setting output voltages. Each channel has a current limit circuit for current protection. The AP2401 series feature high ripple rejection, low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. The chip enable function allows the output of each channel to be turned on/off independently, greatly reducing the power consumption. The AP2401 series have 1.8V/2.5V, 1.8V/2.8V, 1.8V/ 3.3V and 2.8V/1.8V versions. The AP2401 are available in standard SOT-23-6 package. AP2401 Features * * * * * * * * Maximum Output Current/Channel: More Than 150mA (300mA Limit) High Output Voltage Accuracy: 2% Low Quiescent Current/Channel: 25A Typical Low Standby Current: 0.1A Typical High PSRR: 70dB Typical f=1kHz) Extremely Low Noise: 30Vrms (10Hz to 100kHz) Operating Temperature: -40 to 85oC Compatible with Low ESR Ceramic Capacitor Applications * * * * * * Mobile Phones, Cordless Phones Wireless Communication Equipment Portable Games Cameras, Video Recorders Sub-board Power Supplies for Telecom Equipment Battery Powered Equipment SOT-23-6 Figure 1. Package Type of AP2401 Oct. 2009 Rev. 1. 4 1 BCD Semiconductor Manufacturing Limited Data Sheet DUAL LDO REGULATORS Pin Configuration K Package (SOT-23-6) Pin 1 Dot by Marking AP2401 CE1 VIN CE2 1 2 3 6 5 4 VOUT1 GND VOUT2 Figure 2. Pin Configuration of AP2401 (Top View) Pin Description Pin Number 1 2 3 4 5 6 Pin Name CE1 VIN CE2 VOUT2 GND VOUT1 Function On/Off control 1, logic high=enable; logic low=shutdown Input voltage On/Off control 2, logic high=enable; logic low=shutdown Output voltage 2 Ground Output voltage 1 Oct. 2009 Rev. 1. 4 2 BCD Semiconductor Manufacturing Limited Data Sheet DUAL LDO REGULATORS Functional Block Diagram AP2401 CE1 1 On/Off Control Error Amplifier 1 Current Limit 6 VOUT1 VR1 Each Circuit VIN GND 2 5 VR2 Each Circuit Error Amplifier 2 Current Limit 4 VOUT2 CE2 3 On/Off Control Voltage Reference Figure 3. Functional Block Diagram of AP2401 Oct. 2009 Rev. 1. 4 3 BCD Semiconductor Manufacturing Limited Data Sheet DUAL LDO REGULATORS Ordering Information AP2401 E1: Lead Free G1: Green TR: Tape and Reel Package K: SOT-23-6 AP2401 Circuit Type B: Active High (Without Built-in Pull-down Resistor) 1: Fixed Output 1.8V (Channel 1) 3: Fixed Output 2.8V (Channel 1) 1: Fixed Output 1.8V (Channel 2) 2: Fixed Output 2.5V (Channel 2) 3: Fixed Output 2.8V (Channel 2) 4: Fixed Output 3.3V (Channel 2) Package Temperature Range Condition Output Voltages Part Number Lead Free AP2401B12KTRE1 AP2401B13KTRE1 AP2401B14KTRE1 AP2401B31KTRE1 Green AP2401B12KTRG1 AP2401B13KTRG1 AP2401B14KTRG1 AP2401B31KTRG1 Marking ID Lead Free Green Packing Type Active High Without Built-in Pulldown Resistor Active High Without Built-in Pulldown Resistor Active High Without Built-in Pulldown Resistor Active High Without Built-in Pulldown Resistor 1.8V/2.5V E9P G9P Tape & Reel Tape & Reel Tape & Reel Tape & Reel 1.8V/2.8V E9Q G9Q SOT-23-6 -40 to 85oC 1.8V/3.3V E9R G9R 2.8V/1.8V E8R G8R BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Oct. 2009 Rev. 1. 4 4 BCD Semiconductor Manufacturing Limited Data Sheet DUAL LDO REGULATORS Absolute Maximum Ratings (Note 1) Parameter Input Voltage Enable Input Voltage Output Current (TA=25oC) Power Dissipation (TA=25oC) Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) ESD (Human Body Model) Symbol VIN VCE IOUT1+IOUT2 PD TJ TSTG TLEAD ESD Value 6.5 6.5 700 250 150 -65 to 150 260 3000 Unit V V mA mW oC o AP2401 C oC V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Input Voltage Operating Junction Temperature Range Symbol VIN TJ -40 Min Max 6 85 Unit V oC Oct. 2009 Rev. 1. 4 5 BCD Semiconductor Manufacturing Limited Data Sheet DUAL LDO REGULATORS Electrical Characteristics (Channel 1/Channel 2: VIN=VOUT+1V, TJ=25oC, CIN=1F, COUT=1F, unless otherwise specified.) Parameter Output Voltage Accuracy Input Voltage Maximum Output Current Load Regulation Line Regulation Symbol VOUT/VOUT VIN IOUT VRLOAD VRLINE 1mAIOUT100mA VOUT+1VVIN6V IOUT=30mA, VCE=VIN VOUT=1.8V IOUT=30mA Dropout Voltage VDROP IOUT=100mA VOUT=2.5V VOUT=2.8V VOUT=3.3V VOUT=1.8V VOUT=2.5V VOUT=2.8V VOUT=3.3V Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Current Limit Short Circuit Current RMS Output Noise CE "High" Voltage CE "Low" Voltage Thermal Resistance (Junction to Case) JC IQ ISTD PSRR VCE=VIN=VOUT+1V, IOUT=0mA VCE in OFF mode Ripple 0.5Vp-p, f=1kHz VIN=VOUT+1V, IOUT=30mA 150 15 0.01 60 45 45 35 175 135 135 125 25 0.1 70 60 0.2 70 55 55 45 195 160 160 150 45 1 mV Conditions Variation from specified VOUT, IOUT=30mA Min -2 Typ Max 2 6 Unit % V mA mV %/V AP2401 A A dB ppm/oC mA mA (VOUT/VOUT)/T IOUT=30mA, -40oCTJ85oC ILIMIT ISHORT VNOISE VCE=VIN VCE=VIN, VOUT=0 TA=25oC 10Hz f100kHz CE input voltage "High" CE input voltage "Low" SOT-23-6 1.3 100 300 30 30 6 0.25 61.3 Vrms V V o C/W Oct. 2009 Rev. 1. 4 6 BCD Semiconductor Manufacturing Limited Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics AP2401 2.0 1.8 1.6 3.0 2.5 Output Voltage (V) Output Voltage (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 50 100 150 200 250 2.0 2.5V (Channel 2) o TJ=-40 C TJ=25 C TJ=85 C o o 1.5 1.8V (Channel 1) o TJ=-40 C TJ=25 C TJ=85 C 300 350 400 o o 1.0 0.5 0.0 0 50 100 150 200 250 300 350 400 Output Current (mA) Output Current (mA) Figure 4. Output Voltage vs. Output Current Figure 5. Output Voltage vs. Output Current 3.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 2.5 Output Voltage (V) 2.0 1.5 Output Voltage (V) 1.0 2.8V (Channel 2) o TJ=-40 C TJ=25 C TJ=85 C o o 3.3V (Channel 2) o TJ=-40 C TJ=25 C TJ=85 C 0 50 100 150 200 250 300 350 400 o o 0.5 0.0 0 50 100 150 200 250 300 350 400 Output Current (mA) Output Current (mA) Figure 6. Output Voltage vs. Output Current Figure 7. Output Voltage vs. Output Current Oct. 2009 Rev. 1. 4 7 BCD Semiconductor Manufacturing Limited Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401 2.0 1.8 1.6 3.0 2.5 Output Voltage (V) Output Voltage (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1.8V (Channel 1) o TJ=25 C VIN=2.1V VIN=4V VIN=6V 2.0 2.5V (Channel 2) o TJ=25 C VIN=2.8V VIN=4V VIN=6V 1.5 1.0 0.5 0.0 0 50 100 150 200 250 300 350 400 450 0 50 100 150 200 250 300 350 400 Output Current (mA) Output Current (mA) Figure 8. Output Voltage vs. Output Current Figure 9. Output Voltage vs. Output Current 3.0 3.2 2.5 2.8 Output Voltage (V) 2.0 Output Voltage (V) 2.4 2.0 1.6 1.2 0.8 0.4 0.0 3.3V (Channel 2) o TJ=25 C VIN=3.6V VIN=4V VIN=6V 1.5 1.0 2.8V (Channel 2) o TJ=25 C VIN=3.1V VIN=4V VIN=6V 0.5 0.0 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 Output Current (mA) Output Current (mA) Figure 10. Output Voltage vs. Output Current Figure 11. Output Voltage vs. Output Current Oct. 2009 Rev. 1. 4 8 BCD Semiconductor Manufacturing Limited Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401 2.0 1.8 3.0 2.5 1.6 Output Voltage (V) Output Voltage (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 2.0 1.5 1.8V (Channel 1) o TJ=25 C IOUT=0mA IOUT=30mA IOUT=100mA 1.0 2.5V (Channel 2) o TJ=25 C IOUT=0mA IOUT=30mA IOUT=100mA 0 1 2 3 4 5 6 0.5 0.0 5 6 Input Voltage (V) Input Voltage (V) Figure 12. Output Voltage vs. Input Voltage Figure 13. Output Voltage vs. Input Voltage 3.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 2.5 Output Voltage (V) 2.0 1.5 1.0 2.8V (Channel 2) o TJ=25 C IOUT=0mA IOUT=30mA IOUT=100mA 0 1 2 3 4 5 6 Output Voltage (V) 3.3V (Channel 2) o TJ=25 C IOUT=0mA IOUT=30mA IOUT=100mA 0 1 2 3 4 5 6 0.5 0.0 Input Voltage (V) Input Voltage (V) Figure 14. Output Voltage vs. Input Voltage Figure 15. Output Voltage vs. Input Voltage Oct. 2009 Rev. 1. 4 9 BCD Semiconductor Manufacturing Limited Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401 450 400 350 350 Dropout Voltage (mV) Dropout Voltage (mV) 1.8V (Channel 1) o TJ=-40 C TJ=25 C TJ=85 C o o 300 250 200 150 100 50 0 2.5V (Channel 2)) o TJ=-40 C TJ=25 C TJ=85 C o o 300 250 200 150 100 50 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Output Current (mA) Output Current (mA) Figure 16. Dropout Voltage vs. Output Current Figure 17. Dropout Voltage vs. Output Current 350 300 350 Dropout Voltage (mV) 2.8V (Channel 2) o TJ=-40 C TJ=25 C TJ=85 C o o 300 250 200 150 100 50 0 3.3V (Channel 2) o TJ=-40 C TJ=25 C TJ=85 C o o Dropout Voltage (mV) 250 200 150 100 50 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Output Current (mA) Output Current (mA) Figure 18. Dropout Voltage vs. Output Current Figure 19. Dropout Voltage vs. Output Current Oct. 2009 Rev. 1. 4 10 BCD Semiconductor Manufacturing Limited Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401 1.84 1.83 1.82 2.56 2.54 Output Voltage (V) Output Voltage (V) 2.52 1.81 1.80 1.79 1.78 1.77 1.76 2.50 2.48 1.8V (Channel 1) VIN=2.8V IOUT=30mA 2.46 2.5V (Channel 2) VIN=3.5V IOUT=30mA -25 0 25 o 2.44 -25 0 25 o 50 75 50 75 Junction Temperature ( C) Junction Temperature ( C) Figure 20. Output Voltage vs. Junction Temperature Figure 21. Output Voltage vs. Junction Temperature 2.86 3.34 2.84 3.32 Output Voltage (V) Output Voltage (V) 2.82 3.30 2.80 3.28 2.78 3.26 2.76 2.8V (Channel 2) VIN=3.8V IOUT=30mA 3.24 3.3V (Channel 2) VIN=4.3V IOUT=30mA 2.74 -25 0 25 o 50 75 3.22 -40 -20 0 20 40 o 60 80 Junction Temperature ( C) Junction Temperature ( C) Figure 22. Output Voltage vs. Junction Temperature Figure 23. Output Voltage vs. Junction Temperature Oct. 2009 Rev. 1. 4 11 BCD Semiconductor Manufacturing Limited Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401 90 90 75 1.8V (Channel 1) o TJ=-40 C Quiescent Current (A) Quiescent Current (A) TJ=25 C 60 o o 75 2.5V (Channel 2) o TJ=-40 C TJ=25 C TJ=85 C o o TJ=85 C 60 45 45 30 30 15 15 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 Input Voltage (V) Input Voltage (V) Figure 24. Quiescent Current vs. Input Voltage Figure 25. Quiescent Current vs. Input Voltage 90 90 75 2.8V (Channel 2) o TJ=-40 C 75 3.3V (Channel 2) o TJ=-40 C TJ=25 C o o Quiescent Current (A) 60 TJ=85 C o Quiescent Current (A) TJ=25 C o 60 TJ=85 C 45 45 30 30 15 15 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Input Voltage (V) Input Voltage (V) Figure 26. Quiescent Current vs. Input Voltage Figure 27. Quiescent Current vs. Input Voltage Oct. 2009 Rev. 1. 4 12 BCD Semiconductor Manufacturing Limited Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401 30.0 29.5 29.0 31.0 Quiescent Current (A) Quiescent Current (A) 28.5 28.0 27.5 27.0 26.5 26.0 25.5 25.0 24.5 24.0 -25 0 25 1.8V (Channel 1) VIN=2.8V IOUT=0 30.5 30.0 29.5 29.0 28.5 28.0 27.5 27.0 26.5 2.5V (Channel 2) VIN=3.5V IOUT=0 50 o 75 26.0 -25 0 25 o 50 75 Junction Temperature ( C) Junction Temperature ( C) Figure 28. Quiescent Current vs. Junction Temperature Figure 29. Quiescent Current vs. Junction Temperature 31.0 30.5 30.0 32.0 2.8V (Channel 2) VIN=3.8V Quiescent Current (A) 31.5 31.0 30.5 30.0 29.5 29.0 28.5 28.0 27.5 27.0 -25 0 25 3.3V (Channel 2) VIN=4.3V IOUT=0 Quiescent Current (A) 29.5 29.0 28.5 28.0 27.5 27.0 26.5 26.0 IOUT=0 -25 0 25 o 50 75 50 o 75 Junction Temperature ( C) Junction Temperature ( C) Figure 30. Quiescent Current vs. Junction Temperature Figure 31. Quiescent Current vs. Junction Temperature Oct. 2009 Rev. 1. 4 13 BCD Semiconductor Manufacturing Limited Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401 6 VIN (1V/Div) VIN (1V/Div) 5 4 3 1.8V (Channel 1) 7 6 5 4 2.5V (Channel 2) VOUT (50mV/Div) VOUT (50mV/Div) 50 0 -50 -100 Time (40s/Div) 50 0 -50 -100 Time (40s/Div) Figure 32. Line Transient (Conditions: IOUT=30mA, CIN=100nF, COUT=1F) Figure 33. Line Transient (Conditions: IOUT=30mA, CIN=100nF, COUT=1F) 7 VIN (1V/Div) VIN (1V/Div) 6 5 4 2.8V (Channel 2) 7 6 5 4 1.8V/2.5V (Channel 1/Channel 2) VOUT1 (100mV/Div) VOUT (50mV/Div) 50 0 -50 -100 Time (40s/Div) 100 0 -100 -200 VOUT2 VOUT1 0 -50 -100 -150 Time (40s/Div) Figure 34. Line Transient (Conditions: IOUT=30mA, CIN=100nF, COUT=1F) Figure 35. Line Transient (Conditions: channel 1 and 2 on, IOUT=30mA, CIN=100nF, COUT=1F) Oct. 2009 Rev. 1. 4 14 BCD Semiconductor Manufacturing Limited VOUT2 (50mV/Div) Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401 7 VIN (1V/Div) 6 5 4 1.8V/2.5V (Channel 1/Channel 2) 100 VOUT (50mV/Div) 1.8V (Channel 1) 50 0 -50 VOUT1 (100mV/Div) VOUT2 (50mV/Div) 100 0 -100 -200 IOUT (50mA/Div) VOUT2 VOUT1 0 -50 -100 -150 Time (40s/Div) 100 50 0 -50 Time (100s/Div) Figure 36. Line Transient (Conditions: channel 1 and 2 on, IOUT=30mA, CIN=COUT=1F) Figure 37. Load Transient (Conditions: IOUT=10 to 100mA, CIN=COUT=1F) VOUT (50mV/Div) VOUT (50mV/Div) 100 50 0 -50 2.5V (Channel 2) 100 50 0 -50 2.8V (Channel 2) IOUT (50mA/Div) IOUT (50mA/Div) 100 50 0 -50 Time (100s/Div) 100 50 0 -50 Time (100s/Div) Figure 38. Load Transient (Conditions: IOUT=10 to 100mA, CIN=COUT=1F) Figure 39. Load Transient (Conditions: IOUT=10 to 100mA, CIN=COUT=1F) Oct. 2009 Rev. 1. 4 15 BCD Semiconductor Manufacturing Limited Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401 VOUT (50mV/Div) 50 0 -50 3.3V (Channel 2) VOUT1 (20mV/Div) 0 -20 -40 0 VOUT2 100 50 0 -50 Time (100s/Div) IOUT (50mA/Div) 100 50 0 -50 Time (100s/Div) Figure 40. Load Transient (Conditions: IOUT=10 to 100mA, CIN=COUT=1F) IOUT2 (50mA/Div) Figure 41. Cross Talk 1 (Conditions: channel 1 and 2 on, IOUT1=30mA, IOUT2=10 to 100mA, CIN=COUT=1F) VOUT1 (100mV/Div) VOUT2 (20mV/Div) VOUT1 (20mV/Div) 0 -100 -200 1.8V/2.5V (Channel 1/Channel 2) VOUT1 40 20 0 0 -20 -40 200 100 0 VOUT1 VOUT2 VOUT2 100 50 0 -50 IOUT2 (50mA/Div) 100 50 0 -50 Time (100s/Div) IOUT2 (50mA/Div) Time (100s/Div) Figure 42. Cross Talk 2 (Conditions: channel 1 and 2 on, IOUT1=10 to 100mA, IOUT2=30mA, CIN=COUT=1F) Figure 43. Cross Talk 3 (Conditions: channel 1 and 2 on, IOUT1=30mA, IOUT2=10 to 100mA, CIN=COUT=1F) Oct. 2009 Rev. 1. 4 16 BCD Semiconductor Manufacturing Limited VOUT2 (100mV/Div) 100 60 20 1.8V/2.8V (Channel 1/Channel 2) 300 VOUT2 (100mV/Div) 100 20 300 1.8V/2.5V (Channel 1/Channel 2) 200 VOUT1 100 Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401 IOUT1 (50mA/Div) VOUT1 (100mV/Div) VOUT1 (20mV/Div) 0 -100 -200 1.8V/2.8V (Channel 1/Channel 2) 40 0 -20 -40 VOUT1 20 0 VOUT1 200 100 0 VOUT2 VOUT2 100 50 0 -50 100 50 0 -50 Time (100s/Div) IOUT2 (50mA/Div) Time (100s/Div) Figure 44. Cross Talk 4 (Conditions: channel 1 and 2 on, IOUT1=10 to 100mA, IOUT2=30mA, CIN=COUT=1F) Figure 45. Cross Talk 5 (Conditions: channel 1 and 2 on, IOUT1=30mA, IOUT2=10 to 100mA, CIN=COUT=1F) VOUT1 (100mV/Div) 0 -100 -200 1.8V/3.3V (Channel 1/Channel 2) VOUT1 (50mV/Div) 40 0 -50 -100 1.8V/2.5V (Channel 1/Channel 2) 100 50 0 VOUT1 VOUT2 20 0 VOUT1 VOUT2 IOUT1 (100mA/Div) 100 50 0 -50 Time (100s/Div) 100 0 -100 -200 IOUT1 300 200 100 0 IOUT2 Time (100s/Div) Figure 46. Cross Talk 6 (Conditions: channel 1 and 2 on, IOUT1=10 to 100mA, IOUT2=30mA, CIN=COUT=1F) Figure 47. Cross Talk 7 (Conditions: channel 1 and 2 on, IOUT1=IOUT2=10 to 100mA, CIN=COUT=1F) Oct. 2009 Rev. 1. 4 17 BCD Semiconductor Manufacturing Limited IOUT2 (100mA/Div) IOUT1 (50mA/Div) VOUT2 (50mV/Div) VOUT2 (20mV/Div) 100 60 50 150 VOUT2 (100mV/Div) VOUT2 (20mV/Div) 100 60 20 1.8V/3.3V (Channel 1/Channel 2) 300 Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401 VOUT2 (50mV/Div) VOUT1 (50mV/Div) VOUT1 (50mV/Div) 0 -50 -100 1.8V/2.8V (Channel 1/Channel 2) 100 50 0 0 -50 -100 100 50 0 VOUT1 VOUT1 VOUT2 VOUT2 100 0 -100 -200 Time (100s/Div) IOUT2 (100mA/Div) IOUT1 (100mA/Div) IOUT1 (100mA/Div) IOUT1 300 100 0 -100 -200 IOUT2 IOUT1 300 200 100 0 200 100 0 IOUT2 Time (100s/Div) Figure 48. Cross Talk 8 (Conditions: channel 1 and 2 on, IOUT1=IOUT2=10 to 100mA, CIN=COUT=1F) Figure 49. Cross Talk 9 (Conditions: channel 1 and 2 on, IOUT1=IOUT2=10 to 100mA, CIN=COUT=1F) VCE1/VCE2 (1V/Div) 3 2 1 0 1.8V/2.8V (Channel 1/Channel 2) ESR of Output Capacitor () 100 10 VOUT1 0 -1 -2 -3 Time (10s/Div) 1 Stable Area VOUT1 (1V/Div) 3 VOUT2 2 1 0 VOUT2 (1V/Div) 0.1 0.01 0 25 50 75 100 125 150 175 200 Output Current (mA) Figure 50. Enable Voltage vs. Output Voltage (Conditions: VCE1=VCE2=0 to 2V, IOUT=0mA, CIN=COUT=1F) Figure 51. ESR vs. Output Current Oct. 2009 Rev. 1. 4 18 BCD Semiconductor Manufacturing Limited IOUT2 (100mA/Div) VOUT2 (50mV/Div) 50 150 50 1.8V/3.3V (Channel 1/Channel 2) 150 Data Sheet DUAL LDO REGULATORS Typical Performance Characteristics (Continued) AP2401 100 90 80 70 100 1.8V (Channel 1) VIN=2.8V IOUT=30mA COUT=1F 90 80 70 2.5V (Channel 2) VIN=3.5V IOUT=30mA COUT=1F PSRR (dB) PSRR (dB) 60 50 40 30 20 10 0 10 100 1k 10k 100k 60 50 40 30 20 10 0 10 100 1k 10k 100k Frequency (Hz) Frequency (Hz) Figure 52. PSRR vs. Frequency Figure 53. PSRR vs. Frequency 100 90 80 70 100 2.8V (Channel 2) VIN=3.8V IOUT=30mA COUT=1F 90 80 70 3.3V (Channel 2) VIN=4.3V IOUT=30mA COUT=1F PSRR (dB) PSRR (dB) 60 50 40 30 20 10 0 10 100 1k 10k 100k 60 50 40 30 20 10 0 10 100 1k 10k 100k Frequency (Hz) Frequency (Hz) Figure 54. PSRR vs. Frequency Figure 55. PSRR vs. Frequency Oct. 2009 Rev. 1. 4 19 BCD Semiconductor Manufacturing Limited Data Sheet DUAL LDO REGULATORS Typical Application AP2401 VIN VIN =3.5V AP2401B12 CE1 VOUT1 VIN CIN 1F VOUT1=1.8V COUT1 1F VOUT1 GND VOUT2 CE2 VOUT 2 =2.5V COUT2 1F VOUT2 Figure 56. Typical Application of AP2401 Oct. 2009 Rev. 1. 4 20 BCD Semiconductor Manufacturing Limited Data Sheet DUAL LDO REGULATORS Mechanical Dimensions SOT-23-6 Unit: mm(inch) 0 8 0.200(0.008) 0.300(0.012) 0.600(0.024) AP2401 2.820(0.111) 3.020(0.119) 0.300(0.012) 0.400(0.016) 6 2.650(0.104) 2.950(0.116) 5 4 Pin 1 Dot by Marking 1 2 3 0.700(0.028)REF 0.950(0.037)TYP 1.800(0.071) 2.000(0.079) 0.000(0.000) 0.100(0.004) 0.100(0.004) 0.200(0.008) 0.900(0.035) 1.450(0.057) MAX 1.300(0.051) Oct. 2009 Rev. 1. 4 21 BCD Semiconductor Manufacturing Limited 1.500(0.059) 1.700(0.067) BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifiBCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. other rights nor the rights of others. MAIN SITE MAIN SITE - Headquarters BCD Semiconductor Manufacturing Limited - Wafer Fab BCD Semiconductor Manufacturing Limited Shanghai Design Group - IC SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 900, Yi Shan Road, Shanghai 200233, China 8F, Zone B, 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 USA Office BCD Semiconductor Corp. USA Office 30920 Huntwood Ave. Hayward, BCD Semiconductor Corporation CA 94544, USA 30920 Huntwood Ave. Hayward, Tel 94544, U.S.A CA : +1-510-324-2988 Fax: +1-510-324-2788 Tel : +1-510-324-2988 Fax: +1-510-324-2788 REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Limited Tel: +86-21-24162266, Fax: +86-21-24162277 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 Taiwan Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Office (Taiwan) Company Limited Semiconductor Shenzhen Office Room E, SIM-BCD Semiconductor 3rd Fuzhong Road, Futian District, Shenzhen, 4F, 298-1, Rui Guang Road,(Taiwan) Company Limited Shanghai 5F, Noble Center, No.1006,Manufacturing Co., Ltd. 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