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| FAP-450 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 500V 0,38 14A 190W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Avalanche Current Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol Rating Unit V DS 500 V ID 14 A I D(puls) 56 A V GS 30 V I AR A 14*2 *1 E AS mJ 760 PD 190 W T ch 150 C T stg -55 ~ +150 C *1) VCC = 50V; L = 7mH; IAS = 14A; RG = 50 ; Starting Tch = 25C (See Fig. 1 & 2) *2) Repetitive Rating : Pulse Width limited by max. Channel Temperature Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I C C C V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV iss oss rss SD rr rr > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Test conditions ID=1mA VGS=0V ID=250A VDS=VGS VDS=500V Tch=25C Tch=125C VGS=0V VGS=30V VDS=0V ID=8A VGS=10V ID=8A VDS=25V VDS=25V VGS=0V f=1MHz VCC=250V VGS=10V RG = 6,1W RD = 20 Tch=25C L = 100H VCC=400V VGS=10V ID = 14A IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C Min. 500 3,0 Typ. 3,0 Max. 4,0 25 1,0 100 0,38 Unit V V A mA nA S pF pF pF ns ns ns ns A nC nC nC V ns C 7 10 0,32 14 2200 330 140 18 70 130 70 4 170 20 90 1,5 1,0 700 9,0 Symbol R th(ch-a) R th(ch-c) Test conditions channel to ambient channel to case Min. Typ. Max. 35 0,65 Unit C/W C/W Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com N-channel MOS-FET 500V 0,38 FAP-450 FAP-IIS Series Drain-Source-On-State Resistance vs. Tch RDS(on) = f(Tch); ID=8A; VGS=10V; 80s pulse test 14A 190W > Characteristics Typical Output Characteristics ID=f(VDS); 80s pulse test; TC=25C Typical Transfer Characteristics ID=f(VGS); 80s pulse test;VDS=25V; Tch=25C ID [A] 1 RDS(ON) [] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source-On-State-Resistance vs. ID RDS(on)=f(ID); 80s pulse test; TC=25C Typical Forward Transconductance vs. ID gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=250A; VDS=VGS RDS(ON) [] gfs [S] 5 VGS(th) [V] 4 6 ID [A] ID [A] Tch [C] Typical Capacitances vs. VDS C=f(VDS); VGS=0V; f=1MHz Max. Avalanche Energy Derating vs. Starting Channel Temperature Eas=f(starting Tch): Peak IL = 14A; VCC=50V Forward Characteristics of Reverse Diode IF=f(VSD); 80s pulse test; VGS=0V C [F] Eas [mJ] 8 IF [A] 7 9 VDS [V] Starting Tch [C] VSD [V] Allowable Power Dissipation vs. TC PD=f(Tc) Safe Operation Area ID=f(VDS): Single Pulse, Tc=25C Transient Thermal impedance Zth(ch-c=f(t); D=t/T PD [W] 10 ID [A] 12 Zth(ch-c) [K/W] Zthch=f(t) parameter:D=t/T Tc [C] VDS [V] t [s] This specification is subject to change without notice! N-channel MOS-FET 500V 0,38 FAP-450 FAP-IIS Series Typical Gate Charge VGS = f(Qg); ID=14A 14A 190W > Characteristics Drain Current Derating ID = f(TC) ID [A] VDS [V] TC [C] Qg [nC] Fig. 1: Test Circuit Fig. 2: Operating Waveforms This Dallas, TX - (972) change without notice! P.O. Box 702708 -specification is subject to733-1700 - (972) 381-9991 (fax) |
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