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AGR21090E 90 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor (LDMOS) RF power transistor suitable for wideband code-division multiple access (W-CDMA), and single and multicarrier class AB wireless base station power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR21090EU AGR21090EF Sym Ri JC Ri JC Value 0.7 0.7 Unit C/W C/W
Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 C: AGR21090EU AGR21090EF Derate Above 25 C: AGR21090EU AGR21090EF CW RF Input Power (VDS = 31 V) Operating Junction Temperature Storage Temperature Range Sym Value Unit 65 Vdc VDSS VGS -0.5, 15 Vdc PD PD -- -- -- TJ 250 250 1.4 1.4 30 200 W W W/C W/C W C C
AGR21090EU (unflanged)
AGR21090EF (flanged)
Figure 1. Available Packages
Features
Typical performance for 2 carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1 - 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1 - 10 MHz and F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01% (probability) CCDF: -- Output power: 19 W. -- Power gain: 14.5 dB. -- Efficiency: 26%. -- IM3: -33 dBc. -- ACPR: -36 dBc. -- Return loss: -12 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 2140 MHz, 90 W continuous wave (CW) output power. Large signal impedance parameters available.
TSTG -65, 150
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Table 3. ESD Rating* AGR21090E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4
* Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
AGR21090E 90 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. dc Characteristics Parameter Off Characteristics Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) 100 Drain-source Breakdown Voltage (VGS = 0, ID = 300 A) V(BR)DSS IGSS IDSS GFS 65 -- -- -- -- -- -- 6.4 3 150 9 -- -- Adc Adc S Vdc Symbol Min Typ Max Unit
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 1 A) Gate Threshold Voltage (VDS = 10 V, ID = 300 A) Drain-source On-voltage (VGS = 10 V, ID = 1 A)
Gate Quiescent Voltage (VDS = 28 V, ID = 800 mA)
VGS(TH) VDS(ON) VGS(Q)
2.8 3.0 --
3.4 3.7
4.8 4.6 --
Vdc Vdc Vdc
0.11
Table 5. RF Characteristics Parameter Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) (This part is internally matched on both the input and output.) Common-source Amplifier Power Gain* Symbol Dynamic Characteristics CRSS -- 2.1 -- pF Min Typ Max Unit
Functional Tests (in Supplied Test Fixture) Agere Systems Supplied Test Fixture) Drain Efficiency* GPS IM3 ACPR IRL 14.0 24 -- 14.5 -33 -36 -12 93 26 -- -- dB dBc dBc dB W %
Third-order Intermodulation Distortion* (IM3 distortion measured over 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz) Adjacent Channel Power Ratio* (ACPR measured over BW of 3.84 MHz @ f1 - 5 MHz and f2 + 5 MHz)
-32 -35 -9 --
-- --
Input Return Loss*
Power Output, 1 dB Compression Point (VDD = 28 V, fC = 2140.0 MHz)
P1dB
85
Output Mismatch Stress (VDD = 28 V, POUT = 90 W (CW), IDQ = 800 mA, fC = 2140.0 MHz VSWR = 10:1; [all phase angles])
No degradation in output power.
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2135 MHz, and f2 = 2145 MHz. VDD = 28 Vdc, IDQ = 800 mA, and POUT = 19 W average. Nominal operating voltage 28 Vdc. Qualified for a maximum operating voltage of 32 Vdc 0.5 V.
AGR21090E 90 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR21090E
FB1 VGG R3 R4 + C4 C5 C3 + C2 Z6 R2 Z7 Z9 2 Z10 Z8 DUT C13 C14 C15 C16 C17 C7 Z11 C8 C9 Z12 C18 + C10 C11 Z14 + VDD
Z13 C6
RF OUTPUT
PINS: 1. DRAIN 2. GATE 3. SOURCE
Z1 RF INPUT
C1
Z2 C19
Z3
Z4
Z5
1 3
A. Schematic
Parts List: Microstrip line: Z1 0.889 in. x 0.065 in.; Z2 0.370 in. x 0.065 in.; Z3 0.160 in. x 0.250 in.; Z4 0.080 in. x 0.400 in.; Z5 0.195 in. x 1.000 in.; Z6 0.050 in. x 0.860 in.; Z7 0.050 in. x 0.880 in.; Z8 0.050 in. x 0.880 in.; Z9 0.180 in. x 1.060 in.; Z10 0.110 in. x 1.060 in.; Z11 0.260 in. x 1.060 in. x 0.065 in. taper; Z12 0.195 x 0.065 in.; Z13 0.395 in. x 0.065 in.; Z14 0.555 in. x 0.065 in. (R) ATC chip capacitor: C1, C6: 8.2 pF 100B8R2JW500X; C2, C7, C13: 6.8 pF 100B6R8JW500X. (R) Sprague tantalum surface-mount chip capacitor: C3, C5, C11, C17: 22 F, 35 V. (R) Kemet 1206 size chip capacitor: C10, C16: 0.1 F C1206104K5RAC7800. (R) Murata 0805 size chip capacitor: C9, C15: 0.01 F GRM40X7R103K100AL. (R) Johanson Giga-Trim variable capacitor: C18, C19: 0.4 pF to 2.5 pF 27281SL. 1206 size chip capacitor: C4, C8, C14: 22000 pF. 1206 size chip resistor: R2 4.7 , R3 1.02 k, R4 560 k. (R) Fair-Rite ferrite bead: FB1 2743019447. (R) Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5.
B. Component Layout Figure 2. AGR21090E Test Circuit
AGR21090E 90 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
0.0 > WA VELE N GTH S TOW A RD 0.0 0.49 0.48 180 170
U CT
0.6
Z0 = 5
IN D
90
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
LOA D <
0.2
0.49
OW A RD 7 HST 0.4 N GT -170 EL E AV W 0 < -90 -16
0.1
0.4
0.48
) / Yo (-jB CE
0.6
-85
AN PT CE US ES
1. 0
0.2
6 0.4 4 0.0 0 -15 -80
IV CT
DU
0.3
-75
,O o)
5 0.4
-70
06
0.
0 -65 .5
0.6
-60
1.6
0.7
1.4
0.8
1.2
5
0.9
-5
1.0
0
-5
5
-4
MHz (f) 2110 (f1) 2140 (f2) 2170 (f3)
ZL ZS (Complex Source Impedance) (Complex Optimum Load Impedance) 2.52 - j4.60 3.10 - j3.11 2.46 - j4.42 3.01 - j3.05 2.37 - j4.25 2.94 - j2.99 GATE (2) ZS DRAIN (1) ZL SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
F
0.
32
0.
1.8
18
0 -5 -25
4
4 0.
0.3
0.1
3
2.
0
7
-30
-60
0.3
0.1
4
6
-3
-70
5
0.35
0.15
0.36
0.14 -80
-4
0
0.37
0.13
0.4
0.2
-90
0.12
0.38
0.11 -100
0.39
CA P AC I TI
0.1
0.4
-110
VE
RE AC TA N
0.0
0
9
.41
-12
CE CO M
0
0.0
PO N
0.4
8
2
EN
T
(-j
-1
0
.4
Z X/
40
-20
ZS
5
0.0
3.
0
0.6
f3
f1
R
IN
-15
4.0
0.8
f3
1.
0
f1
5.0
ZL
-10
0.
8
50
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
20
10
0.
0.2 0.3
-4 0
8
0.4
10 0.1
-1
0.25 0.26 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFLECTION COEFFICIEN T IN DEG REES LE OF ANG ISSION COEFFI CIEN T IN TRA N SM D EGR EES
20
L E OF ANG
0.2
0. 19 0. 31
50
-20
0.2 2
0.2 8
0.2 9 0.2 1 -30
0. 07 30 0.
43
AGR21090E 90 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
16.50 16.00 15.50 15.00 GPS (dB) S 14.50 14.00 13.50 13.00 12.50 12.00 11.50 1.00
Test Conditions: VDD 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz. Two-tone measurement, 10 MHz tone spacing.
IDQ = 1100 mA
IDQ = 950 mA
IDQ = 500 mA
IDQ = 650 mA 10.00 POUT (W) PEPZ
IDQ = 800 mA 100.00
Figure 4. Two-Tone Power Gain vs. Output Power and IDQ
-20.00 -25.00 -30.00 -35.00 IMD3 (dBc)Z -40.00 -45.00 -50.00 -55.00 -60.00 -65.00 -70.00 1.00
Test Conditions: VDD 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz. Two-tone measurement, 10 MHz tone spacing.
IDQ = 500 mA IDQ = 650 mA
IDQ = 1100 mA IDQ = 800 mA 10.00 POUT (W) PEPZ IDQ = 950 mA 100.00 1000.00
Figure 5. IMD3 vs. Output Power and IDQ
AGR21090E 90 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
0.0 -5.0 -10.0 -15.0 IMD (dBc)Z -20.0 -25.0 -30.0 -35.0 -40.0 -45.0 -50.0 -55.0 0.1 1 10 100 IM3 IM5 IM7
Test Conditions: VDD 28 Vdc, f0 = 2140 MHz, POUT = 90 W PEP. Two-tone measurement, 10 MHz tone spacing.
TWO-TONE SPACING (MHz)Z
Figure 6. IMD vs. Tone Spacing
20.00 18.00 16.00 14.00 GAIN (dB)Z 12.00 10.00 8.00 6.00 4.00 2.00 0.00 5.00 IM3 10.00 15.00 20.00 25.00 30.00 ACPR GAIN 50.0 30.0 20.0 10.0 0.0 -10.0 -20.0 -30.0 -40.0 -50.0 35.00 (%), IM3 (dBc), ACPR (dBc)Z 40.0
POUT (W-AVERAGE)Z
Test Conditions: VDD 28 Vdc, IDQ = 800 mA. 2 carrier W-CDMA 3GPP peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 MHz CBW.
Figure 7. Gain, Efficiency, IM3, and ACPR vs. Output Power
AGR21090E 90 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
20.00 18.00 16.00 14.00 GAIN (dB)Z 12.00 10.00 8.00 6.00 4.00 2.00 0.00 2100 2110 2120 2130 2140 2150 2160 IRL IM3 ACPR 2170 GAIN 50.0 40.0 20.0 10.0 0.0 -10.0 -20.0 -30.0 -40.0 -50.0 2180 IM3 (dBc), ACPR (dBc)Z 30.0 (%), IRL (dB),
FREQUENCY (MHz)Z
Test Conditions: VDD 28 Vdc, POUT = 19 W, IDQ = 800 mA. 2 carrier W-CDMA 3GPP peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 MHz CBW.
Figure 8. Broadband Performance
+5 -0 -5 -10 -15 -20 -25 -30 -35 -40 -45 CENTER 2.140 GHz SPAN 50 MHz
Test Conditions: VDD 28 Vdc, POUT = 19 W, IDQ = 800 mA. 2 carrier W-CDMA 3GPP peak-to-average = 8.5 dB @ 0.01% CCDF, 10 MHz spacing, 3.84 MHz CBW.
F1
F2
IM3
IM3
ACPR
ACPR
Figure 9. Spectral Plot
AGR21090E 90 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
16.00 15.00 14.00
PGS (dB)Z
8.00 AM TO AM (power gain [dB]) 4.00
PHASE (degrees)Z
0.00 -4.00 -8.00 -12.00 -16.00
13.00 12.00 11.00 10.00 9.00 15.0 20.0
AM TO PM (PHASE [degrees])
25.0
30.0 PIN (dBm)Z
35.0
40.0
-20.00 45.0
Test Conditions: VDD 28 Vdc, f0 = 2140 MHz, IDQ = 800 mA. CW input.
Figure 10. AM-AM and AM-PM Characteristics
AGR21090E 90 W, 2.110 GHz--2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Package Dimensions
All dimensions are in inches. Tolerances are 0.005 in. unless specified.
AGR21090EU
PINS: 1. DRAIN 2. GATE 3. SOURCE
1 AGR21090XU M-AGR21090U YYWWLL YYWWLL XXXXX ZZZZZZZ ZZZZZZZ 2 PEAK DEVICES 3
1
3 2
AGR21090EF
PINS: 1. DRAIN 2. GATE 3. SOURCE
1 PEAK DEVICES AGR21090XF M-AGR21090F YYWWLL XXXXX YYWWLL ZZZZZZZ ZZZZZZZ 2 3
1 3 2
Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype.

The last two letters of the part number denote wafer technology and package type.
YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; BK = Bangkok, Thailand). XXXXX = five-digit wafer lot number. ZZZZZZZ = seven-digit assembly lot number on production parts. ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.

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