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 LL4148
SMALL SIGNAL SWITCHING DIODE FEATURES
Silicon epitaxial planar diode High speed switching diode 500mW power dissipation
REVERSE VOLTAGE - 75 Volts FORWARD CURRENT - 0.15Amperes DL - 35
.063(1.6) .055(1.4) .020(0.5) .012(0.3) .020(0.5) .012(0.3)
MECHANICAL DATA
Case: Mini-MELF glass case
Polarity: Color band denotes cathode Weight : Approx.0.05 grams
.146(3.7) .130(3.3)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 ambient temperature unless otherwise specified.
MAXIMUM RATINGS
LL4148
Reverse Vltage Peak Reverse Voltage Average Forward Rectified Current Half Wave Rectification with Resist .load at Tamb=25 and f50HZ Forward Surge Current at t1s and TJ=25 Power Dissipation at Tamb=25 Junction Temperature Storage Temperature Range IFSM Ptot TJ TSTG IO VR VRM UNIT V V mA
75 100 150 500 500
(1)
mA mW
175 65 to175
NOTE:(1) Valid provided that electrodes are kept at ambient temperature .
ELECTRICAL CHARACTERISTICS
MIN
Forward Voltage at IF=10mA Leakage Current at VR=20V at VR=75V at VR=20V TJ=150 Capacitance at VF=VR=0V Voltage Rise When Switching ON Tested With 50mA Pulses tp=0.1us.Rise Time<30ns.fp=5to 100HZ Reverse Recovery Time From IF=10mA VR=6V. RL=100 at IR=1mA Thermal Resistance Junction to Ambient Rectification Effciency at 100MHZ VRF=2V
TYP -
MAX 1 25 5 50 4 2.5
UNIT V uA uA uA pF v
VF IR IR IR
Ctot

Vfr trr
RJA
0.45

4 350(1)
ns K/W
V
NOTE:(1)Valid provided that electrodes are kept at ambient temperature.
~ 416 ~
RATING AND CHARACTERISTIC CURVES LL4148
mW 1000 900 800 700 600 500 400 300 200 100 0
FLG.1-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE 103
FIG.2-FORWARD CHARACTERISTICS
102
TJ = 100C
I
F
Ptot
10 TJ = 25C
1
10-1
10-2
0
150 TA
200
0
1
2V
VF
A
100
FLG.3-ADMISSIBLE REPETITVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
IFRM
10
tp
V=tp/T T=1/fp
IFRM
1
T
0.1
10-5
10-3
10-2
10-1
1
10S
tp
~ 417 ~
RATING AND CHARACTERISTIC CURVES LL4148
FIG.4-RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT
FIG.5-RELATIVE CAPACITANCE VERSUS VOLTAGE
1.1 D.U.T 60 VRF=2V Ctot(VR) Ctot(0V) TJ = 25C f = 1 MHz 1.0
= 2nF
5K
VO
0.9
0.8
0.7
0
2
4
6
8 VR
10V
FIG.6-LEAKAGE CURRENT VERSUS nA 10
4
FIG.7-DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT 10
4
JUNCTION TEMPERATURE
IR
10
3
rF
2
10
3
10
10
2
10 10
1 0 100 Tj 200 1 10
-2
10
-1
1
10 IF
10
2
m
~ 418 ~


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