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| EID1416-12 UPDATED 12/06/2006 14.0-16.0 GHz 12-Watt Internally Matched Power FET Excelics FEATURES * * * * * * 14.0- 16.0GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.0 dBm Output Power at 1dB Compression 5.0 dB Power Gain at 1dB Compression 22% Power Added Efficiency Hermetic Metal Flange Package .827.010 .669 .120 MIN EID1416-12 YYWW SN .120 MIN .024 .421 .125 .508.008 .442 .168.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105.008 ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IDSS VP RTH Note: 1. Tested with 50 Ohm gate resistor. 2. Overall Rth depends on case mounting. Caution! ESD sensitive device. MIN 40.0 4.0 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.0-16.0GHz VDS = 10 V, IDSQ 3200mA Gain at 1dB Compression f = 14.0-16.0GHz VDS = 10 V, IDSQ 3200mA Gain Flatness f = 14.0-16.0GHz VDS = 10 V, IDSQ 3200mA Power Added Efficiency at 1dB Compression f = 14.0-16.0GHz VDS = 10 V, IDSQ 3200mA Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 2 TYP 41.0 5.0 MAX UNITS dBm dB 1.0 22 4000 6000 -1.0 2.5 5000 7500 -2.5 3.0 o dB % mA mA V C/W f = 14.0-16.0GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 60 mA MAXIMUM RATING1,2 (Ta = 25C) SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15V -5V 135mA -21mA 40.0dBm o 175 C o -65 to +175 C CONTINUOUS2 10V -3V 45mA -7mA @ 3dB Compression 175 oC -65 to +175 oC 50W VDS VGS Igsf Igsr Pin Tch Tstg Pt 50W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 1 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised December 2006 |
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