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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1229 DESCRIPTION *With TO-3PN package *Complement to type 2SB912 *High DC current gain *High current capacity and wide ASO *Low saturation voltage APPLICATIONS *Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.5 150 -55~150 CONDITIONS Open emitter Open base Open collector MAX 70 60 6 10 15 60 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;RBE= IC=5mA ;IE=0 IC=5A ;IB=10mA IC=5A ;IB=10mA VCB=40V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=2V IC=5A ; VCE=5V 2000 MIN 60 70 2SD1229 TYP. MAX UNIT V V 1.5 2.0 0.1 3.0 V V mA mA 20 MHz Switching times Turn-on time Storage time Fall time IC=500IB1=-500IB2=5A VCC=20V;RL=4 0.6 3.0 1.8 s ton tstg tf s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1229 Fig.2 outline dimensions 3 |
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