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| 1N-SS254 HIGH-SPEED SWITCHING DIODE Features * Ultra-high speed * High withstand voltage * Low leakage and high voltage Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Current Peak Forward Current Non-Repetitive Peak Forward Surge Current (t = 1 s) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM IFSM Tj TS Value 40 35 110 300 400 175 - 65 to + 175 Unit V V mA mA mA O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 35 V Capacitance at VR = 0.5 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA, VR = 6 V Symbol VF IR CT trr Max. 1.2 0.5 3 4 Unit V A pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 23/06/2007 |
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