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| LESHAN RADIO COMPANY, LTD. Darlington Transistors NPN Silicon We declare that the material of product . compliance with RoHS requirements. LMBT6427LT1G 3 Ordering Information Device LMBT6427LT1G LMBT6427LT3G Marking 1V 1V Shipping 3000/Tape&Reel 10000/Tape&Reel 1 2 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V V CBO EBO CASE 318-08, STYLE 6 SOT-23 (TO-236AB) Value 40 40 12 500 Unit Vdc Vdc Vdc mAdc 2 EMITTER 1 BASE 3 COLLECTOR IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C RJA PD RJA TJ , Tstg DEVICE MARKING LMBT6427LT1G = 1V ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) (I C = 10 mAdc, V BE = 0) Collector-Base Breakdown Voltage (I C = 100 Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10 Adc, I C = 0) Collector Cutoff Current (V CE V (BR)CEO V (BR)CBO V (BR)EBO 40 40 12 -- -- -- -- -- -- 1.0 50 50 Vdc Vdc Vdc Adc nAdc nAdc = 25Vdc, I B = 0) I CES I CBO I EBO Collector Cutoff Current ( V CB = 30Vdc, I E = 0) Emitter Cutoff Current ( V EB = 10Vdc, I C= 0) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 1/6 LESHAN RADIO COMPANY, LTD. LMBT6427LT1G ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE 10,000 20,000 14,000 VCE(sat)(3) -- -- V BE(sat) V BE(on) Min Max Unit -- ON CHARACTERISTICS DC Current Gain (I C = 10 mAdc, V CE = 5.0 Vdc) (I C = 100 mAdc, V CE = 5.0Vdc) (I C = 500 mAdc, V CE = 5.0Vdc) Collector-Emitter Saturation Voltage (I C = 50 mAdc, I B = 0.5 mAdc) (I C = 500 mAdc, I B = 0.5 mAdc) Base-Emitter Saturation Voltage (I C = 500 mAdc, I B = 0.5 mAdc) Base-Emitter On Voltage (I C = 50 mAdc, V CE = 5.0Vdc) 100,000 200,000 140,000 Vdc 1.2 1.5 2.0 1.75 Vdc Vdc -- -- SMALL-SIGNAL CHARACTERISTICS Output Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) C obo -- -- 1.3 -- 7.0 15 -- 10 pF pF Vdc dB Input Capacitance C ibo (V EB=0.5 Vdc, I C = 0 , f = 1.0 MHz) Current Gain-High Frequency |h fe | (V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz) Noise Finure NF (V CE=5.0 Vdc, I C = 1.0 mAdc , R S =100 k, f = 1.0 kHz ) 3. Pulse Tent: Pulse Width = 300s, Duty Cycle = 2.0% RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2/6 LESHAN RADIO COMPANY, LTD. LMBT6427LT1G NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25C) 500 2.0 BANDWIDTH = 1.0 Hz ~ R S~ 0 200 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 i n , NOISE CURRENT (pA) e n , VOLTAGE (nV) 100 I C = 1.0 mA 10 A 50 100 A 20 0.1 0.07 0.05 0.03 0.02 100 A 10 A I C = 1.0 mA 10 5.0 10 20 50 100 200 500 1k 2k 5k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1k 2k 5k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 2. Noise Voltage V T , TOTAL WIDEBAND NOISE VOLTAGE (nV) 200 14 Figure 3. Noise Current BANDWIDTH = 10 Hz TO 15.7 kHz 100 70 50 NF, NOISE FIGURE (dB) BANDWIDTH = 10 Hz TO 15.7 kHz I C = 10 A 12 10 8.0 10 A 100 A 30 20 100 A 6.0 4.0 2.0 0 I C = 1.0 mA 1.0 mA 10 1.0 2.0 5.0 10 20 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 1000 R S , SOURCE RESISTANCE (k) R S , SOURCE RESISTANCE (k) Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure 3/6 LESHAN RADIO COMPANY, LTD. LMBT6427LT1G SMALL-SIGNAL CHARACTERISTICS 20 |h fe |, SMALL- SIGNAL CURRENT GAIN 4.0 V CE = 5.0 V 2.0 T J = 25C 10 f = 100 MHz T J = 25C C, CAPACITANCE (pF) 7.0 5.0 C ibo C obo 1.0 0.8 0.6 0.4 3.0 2.0 0.04 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 6. Capacitance 200 Figure 7. High Frequency Current Gain V CE , COLLECTOR- EMITTER VOLTAGE (VOLTS) 3.0 T J = 125C 100 70 T J = 25C 2.5 h FE , DC CURRENT GAIN 50 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 25C I C = 10 mA 2.0 50 mA 250 mA 500 mA 1.5 -55C V CE = 5.0 V 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) R V , TEMPERATURE COEFFICIENTS (mV/C) I B , BASE CURRENT (A) Figure 8. DC Current Gain 1.6 Figure 9. Collector Saturation Region -1.0 T J = 25C 1.4 *APPLIES FOR I C / I B < h FE /3.0 -2.0 25C TO 125C *R VC FOR V CE(sat) -55C TO 25C V, VOLTAGE (VOLTS) V BE(sat) @ I C /I B = 1000 1.2 -3.0 V BE(on) @ V CE = 5.0 V 1.0 25C TO 125C -4.0 VB FOR V BE -5.0 0.8 V CE(sat) @ I C /I B = 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 500 -55C TO 25C -6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 10. "On" Voltages Figure 11. Temperature Coefficients 4/6 LESHAN RADIO COMPANY, LTD. LMBT6427LT1G 1.0 0.7 D = 0.5 0.2 r (t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.05 SINGLE PULSE SINGLE PULSE Z JC(t) = r(t) * R JC T J(pk) - T C = P (pk) Z JC(t) Z JA(t) = r(t) * R JA T J(pk) - T A = P (pk) Z JA(t) 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k t, TIME (ms) Figure 12. Thermal Response FIGURE A t PP P PP t 1 1/f tP PEAK PULSE POWER = P P DUTY CYCLE =t 1 f = t1 Design Note: Use of Transient Thermal Resistance Data 5/6 LESHAN RADIO COMPANY, LTD. LMBT6427LT1G SOT-23 NOTES: A L 3 1 V G 2 BS DIM A B C D G H J J K L S V MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 C D H K 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm 6/6 |
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