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Ordering number : ENA1315
EMH2412
SANYO Semiconductors
DATA SHEET
EMH2412
Features
* * * * *
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% When mounted on ceramic substrate (900mm2x0.8mm) 1unit When mounted on ceramic substrate (900mm2x0.8mm) Conditions Ratings 24 12 6 60 1.3 1.4 150 --55 to +150 Unit V V A A W W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3A 0.5 2.8 4.8 Ratings min 24 -1 10 1.3 typ max Unit V A A V S
Marking : LM
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
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91008PE TI IM TC-00001579 No. A1315-1/4
EMH2412
Continued from preceding page.
Parameter Symbol RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=3A, VGS=4.5V ID=3A, VGS=4V ID=3A, VGS=3.1V ID=1.5A, VGS=2.5V See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4.5V, ID=6A VDS=10V, VGS=4.5V, ID=6A VDS=10V, VGS=4.5V, ID=6A IS=6A, VGS=0V Ratings min 16 17 18 21 typ 21 22 25 30 310 1020 3000 2250 6.3 0.83 1.9 0.8 1.2 max 27 29 34 42 Unit m m m m ns ns ns ns nC nC nC V
Static Drain-to-Source On-State Resistance
Package Dimensions
unit : mm (typ) 7045-006
Electrical Connection
8 0.2 0.2 8 5 0.125
7
6
5
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain
1.7
2.1
1 0.5 2.0
4 0.2
1
2
3
4
Top view
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : EMH8
Switching Time Test Circuit
4.5V 0V VIN VDD=10V ID=3A RL=3.33 D Rg VOUT
PW=10s D.C.1% G
0.05 VIN
0.75
EMH2412 P.G 50 S
Rg=2k
No. A1315-2/4
EMH2412
4.5V 4.0V
6
ID -- VDS
2.5V
7
ID -- VGS
VDS=10V
2.0
V
6
5
3.5V
Drain Current, ID -- A
Drain Current, ID -- A
1.8V
5 4 3
4
3
Ta=7 5C
0 0.2 0.4 0.6 0.8 1.0 1.2
2
VGS=1.5V
2 1 0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
25C
1.4 1.6
1
--25C
1.8
Drain-to-Source Voltage, VDS -- V
60
RDS(on) -- VGS
IT13201 60
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
IT13202
Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m
50
3A
Static Drain-to-Source On-State Resistance, RDS(on) -- m
ID=1.5A
50
40
40
30
30
20
20
5A =1. , ID .5V =2 VGS 3.0A I= .0V, D =4 3.0A VGS I= .5V, D =4 VGS
10
10
0
0
1
2
3
4
5
6
7
8 IT13996
0 --60
--40 --20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
10
| yfs | -- ID
Ambient Temperature, Ta -- C
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
IS -- VSD
IT13997
Forward Transfer Admittance, | yfs | -- S
7 5
VDS=10V
VGS=0V
2
= Ta
1.0 7 5 3 2 0.1 0.01
--2
C 5
C 75
C 25
Source Current, IS -- A
3
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
7 5
SW Time -- ID
td(off)
5 7 10 IT13998
0.01 0.2
0.4
Ta=7 5C 25C --25C
0.6
0.8
1.0
1.2 IT13999
Diode Forward Voltage, VSD -- V
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6
VGS -- Qg
3 2
tf
1000 7 5
tr
3 2 0.1
td(on)
Gate-to-Source Voltage, VGS -- V
VDD=10V VGS=4.5V
VDS=10V ID=6A
Switching Time, SW Time -- ns
2
3
5
7
1.0
2
3
5
7
10
7 IT13209
Drain Current, ID -- A
IT13207
Total Gate Charge, Qg -- nC
No. A1315-3/4
EMH2412
2 100 7 5 3 2
ASO
Allowable Power Dissipation, PD -- W
1.6
PD -- Ta
When mounted on ceramic substrate (900mm2x0.8mm)
IDP=60A
PW10s
10 0 1m s s
1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0
Drain Current, ID -- A
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
ID=6A
DC
op
10
era
ms 0m s
10
To t
al
tio
Operation in this area is limited by RDS(on).
n( Ta =2
1u
di
ni
ss
ip
t
ati
5 C)
on
0.01 0.01
Ta=25C Single pulse When mounted on ceramic substrate (900mm2x0.8mm) 1unit
23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5
0
20
40
60
80
100
120
140
160
Drain-to-Source Voltage, VDS -- V
IT13983
Ambient Temperature, Ta -- C
IT13984
Note on usage : Since the EMH2412 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
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This catalog provides information as of September, 2008. Specifications and information herein are subject to change without notice.
PS No. A1315-4/4

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