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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Low Ferquency NPN Transistor VOLTAGE 12 Volts APPLICATION * For switching,for muting. 2SC5663PT CURRENT 0.5 Ampere FEATURE * Small surface mounting type. (SOT-723) * High current * Collector saturation voltage is low. VCE(sat)<=250mA At Ic=200mA/IB=10mA (3) SOT-723 (2) 0.17~0.27 0.4 1.15~1.25 0.4 (1) CONSTRUCTION * NPN Silicon Transistor 0.75~0.85 0.27~0.37 MARKING * 31 0.17~0.27 0.75~0.85 0.11~0.14 0.45~0.55 C (3) CIRCUIT 1.15~1.25 (1) B E (2) Dimensions in millimeters SOT-723 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Collector Current DC CONDITION Open Emitter Open Base SYMBOL VCBO VCEO IC ICM MIN. MAX. 15 12 500 1000 UNITS Volts Volts mAmps mAmps Peak Collector Current Total Power Dissipation TA 25OC; Note 1 PTOT - 150 mW Storage Temperature Junction Temperature Operating Ambient Temperature TSTG TJ TAMB -55 -55 +150 +150 +150 o C C C o o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2004-06 RATING CHARACTERISTICS ( 2SC5663PT ) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO BVCBO BVCEO BVEBO hFE VCEsat Cob fT Note 1. Pulse test: tp 300 s; 0.02. PARAMETER collector cut-off current VCB=15V CONDITIONS MIN. - 15 12 6 270 - - - Typ. - - - - - 90 7.5 320 MAX. 0.1 - - - 680 250 - - mV pF MHz UNIT uA V V V collector-base breakdown voltage IC =10uA collector-emitter breakdown voltage IC =1mA emitter-base breakdown voltage DC current transfer ratio collector-emitter saturation voltage collector output capacitance transition frequency IE =10uA VCE=2V , IC=10mA IC/IB=200mA/10mA IE = 0; VCB = 10V ; f = 1 MH z IE = -10 mA; VCE = 2 V; f = 30 MHz RATING CHARACTERISTIC CURVES ( 2SC5663PT ) !Electrical characteristic curves 1000 COLLECTOR CURRENT : IC (mA) VCE = 2V 1000 Ta = 125C VCE = 2V COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 1000 500 IC/IB = 20 500 DC CURRENT GAIN : hFE 500 200 100 50 20 10 5 2 25C -40C 200 200 100 50 20 10 5 2 1 Ta = 125C 25C -40C 100 50 25C 10 5 2 Ta = 1 -40C 20 25C 1 0 0.5 1.0 1.5 1 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Fig.2 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) Fig.3 Collector-emitter saturation voltage vs. collector current ( ) IC/IB = 20 1000 500 Ta = 25C 10000 5000 2000 1000 1000 VCE = 2V Ta = 25C 200 Pulsed Ta = -40C 25C 125C 500 200 100 50 20 10 5 2 1 IC/IB = 50 20 10 100 fT (MHZ) 500 200 100 50 20 10 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.4 Collector-emitter saturation voltage vs. collector current ( ) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 500 200 100 50 Cib Fig.5 Base-emitter saturation voltage vs. collector current Fig.6 Collector output capacitance Emitter input capacitance vs. base voltage IE = 0A f = 1MHz Ta = 25C 20 10 5 2 1 Cob 0.1 0.2 0.5 1 2 5 10 20 50 100 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs collector-base voltage Emitter input capacitance vs emitter-base voltage |
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