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| 2SB1188 Elektronische Bauelemente PNP Silicon Medium Power Transistor SOT-89 Description The 2SB1188 is designed for medium power amplifier applications. 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER Features * Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) * RoHS Compliant Product REF. A B C D E F Min. 4.4 4.05 1.50 1.30 2.40 0.89 Millimeter Max. 4.6 4.25 1.70 1.50 2.60 1.20 REF. G H I J K L M Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 q TYP. 0.70 REF. Millimeter Absolute Maximum Ratings at Ta = 25: : Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 -40 -32 -5 -2 0.5 (2.0*) Unit V V V A W *When mounted on a 40x40x0.7mm ceramic board. Electrical Characteristics(Ta = 25 : Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -40 -32 -5 82 Typ. -500 150 50 ,unless otherwise noted) Max. Unit Test Conditions V IC=-50uA , IE=0 V IC=-1mA, IB=0 V IE=-50uA ,IC=0 -1 uA VCB=-20V, IE=0 -1 uA VEB=-4V, IC=0 -800 mV IC=-2A, IB=-200mA 390 VCE=-3V, IC=-500mA MHz VCE=-5V, IC=-500mA, f=30MHz pF VCB=-10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Classification Of hFE Rank Range P 82 ~ 180 Q 120 ~ 270 R 180 ~ 390 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 04-Apr-2007 Rev. C Page 1 of 2 2SB1188 Elektronische Bauelemente PNP Silicon Medium Power Transistor Characteristics Curve http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 04-Apr-2007 Rev. C Page 2 of 2 |
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