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| CHENMKO ENTERPRISE CO.,LTD SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts APPLICATION * Power amplifier . 2SA1020PT CURRENT 0.5 Ampere FEATURE * * * * Small flat package. (SOT-23) Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-0.5A) High speed switching time: tstg= 1.0uSec (typ.) High saturation current capability. SOT-23 .041 (1.05) .033 (0.85) (1) .110 (2.80) .082 (2.10) .066 (1.70) .119 (3.04) CONSTRUCTION * PNP Switching Transistor (3) (2) MARKING * HFE(O):UT * HFE(Y):WT .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT (1)B C (3) .045 (1.15) .033 (0.85) E (2) .019 (0.50) Dimensions in inches and (millimeters) SOT-23 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. -50 -50 -5 -500 -1000 -50 350 +150 +150 +150 UNITS Volts Volts Volts mAmps mAmps mAmps mW o C C C o o Note 1. Transistor mounted on PCB 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2002-10 RATING CHARACTERISTIC CURVES ( 2SA1020PT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector Cut-off Current Emitter Cut-off Current CONDITION IE=0; VCB=-50V IC=0; VEB=-5V VCE=-2V; Note 1 IC=-0.5A; Note 2 IC=-1.0A IC=-1A; IB=-0.05A IC=-1A; IB=-0.05A IE=ie=0; VCB=10V; f=1MHz IC=-0.5A; VCE=-2V; f=100MHz SYMBOL ICBO ICEO MIN. TYPE MAX. -0.1 -0.1 UNITS uA uA DC Current Gain hFE 70 20 - 40 120 240 -0.5 -1.2 Volts mVolts pF MHz Collector-Emitter Saturation Voltage Base-Emitter Saturatio Voltage Collector Capacitance Transition Frequency VCEsat VBEsat CC fT SWITCHING TIMES ( Between 10% and 90% levels ) PARAMETERS Turn-on Time Storage Time Fall Time IB1 20uSec CONDITION OUTPUT SYMBOL ton ts tf MIN. - TYPE 0.1 1.0 0.1 MAX. - UNITS uSec uSec uSec IB2 INPUT IB2 30 ohmS -30V IB1 -IB1=IB2=0.05A Duty cycle<1% Note : 1. Pulse test: tp 300uSec; 0.02. 2. hFE(1) Classification O: 70 to 140, Y: 120 to 240 RATING CHARACTERISTIC CURVES ( 2SA1020PT ) Typical Electrical Characteristics Figure 1. VCE - IC -1.6 -1.6 Figure 2. VCE - IC COLLECTOR-EMITTER VOLTAGE VCE (V) TA=25 OC COLLECTOR-EMITTER VOLTAGE VCE (V) COMMON EMITTER COMMON EMITTER TA=100 OC -1.2 IB=-5mA -10mA -20mA -1.2 IB=-3mA -5mA -10mA -20mA -30mA -30mA -0.8 -40mA -0.8 -40mA -0.4 -0.4 -40mA 0 0 -0.4 -0.8 -1.2 COLLECTOR CURRENT IC (A) -1.6 -2.0 0 0 -0.4 -0.8 -1.2 COLLECTOR CURRENT IC (A) -1.6 -2.0 Figure 3. VCE - IC -1.6 1000 COMMON EMITTER Figure 4. hFE - IC COMMON EMITTER COLLECTOR-EMITTER VOLTAGE VCE (V) -1.2 IB=-5mA -10mA -20mA -30mA -40mA DC CURRENT GAIN hFE TA=-55 C O 500 300 TA=100OC VCE=-2V 25OC 100 -55OC -0.8 50 30 -0.4 -50mA 0 0 -0.4 -0.8 -1.2 COLLECTOR CURRENT IC (A) -1.6 -2.0 10 -10 -30 -100 -300 COLLECTOR CURRENT IC (mA) -1000 -3000 Figure 5. VCE(sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1 -0.5 -0.3 -10 Figure 6. VBE(sat) - IC BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER IC/IB=20 COMMON EMITTER -5 -3 IC/IB=20 -55OC -1 25OC -0.1 TA=100OC 25OC -55OC -0.05 -0.03 -0.5 -0.3 TA=100OC -0.01 -10 -30 -100 -300 COLLECTOR CURRENT IC (mA) -1000 -3000 -0.1 -10 -30 -100 -300 COLLECTOR CURRENT IC (mA) -1000 -3000 RATING CHARACTERISTIC CURVES ( 2SA1020PT ) Typical Electrical Characteristics Figure 7. IC - VBE -1.6 COMMON EMITTER Figure 8. PC - TA 1.2 COLLECTOR CURRENT IC (A) VCE=-2V COLLECTOR POWER DISSIPATION PC (W) 1.0 -1.2 TA=100 OC 25 OC -55 OC 0.8 -0.8 0.6 0.4 -0.4 0.2 0 0 -0.4 -0.8 -1.2 BASE-EMITTER VBE (V) -1.6 -2.0 0 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA ( OC) 140 160 Figure 9. Safe Operation Area -3000 -1000 -500 -300 -100 -50 -30 -10 -5 -3 -1 -0.1 COLLECTOR CURRENT IC (mA) 10mS* IC max (continous) DC operation TA=25OC IC max (pulse)* 1S* 100mS* 1mS* *: Single nonrepetitive pulse TA=25OC Curve must be derated linearly with increase in temperature Tested without a substrate -0.3 -1.0 -3.0 -10 -30 COLLECTOR-EMITTER VOLTAGE VCE (V) -100 |
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