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| MMBD217SEW SILICON EPITAXIAL PLANAR SWITCHING DIODE 3 Applications * Ultra high speed switching 1 2 Marking Code: A7 Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current (Single) Maximum (Peak) Forward Current (Single) Peak Forward Surge Current (tp = 1 s) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM IFSM Pd TJ Ts Value 80 80 100 300 4 200 150 - 55 to + 150 Unit V V mA mA A mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 70 V Capacitance between Terminals at VR = 6, f = 1 MHz Reverse Recovery Time at IF = 5 mA, VR = 6 V, RL = 50 Symbol VF IR CT trr Max. 1.2 0.1 3.5 4 Unit V A pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 10/10/2008 MMBD217SEW SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 10/10/2008 |
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