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| EIC4953-8 ISSUED 02/28/2008 4.90-5.30 GHz 8-Watt Internally Matched Power FET FEATURES * * * * * * * 4.90-5.30GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 10.5 dB Power Gain at 1dB Compression 35% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 4.90-5.30GHz VDS = 10 V, IDSQ 2200mA Gain at 1dB Compression f = 4.90-5.30GHz VDS = 10 V, IDSQ 2200mA Gain Flatness f = 4.90-5.30GHz VDS = 10 V, IDSQ 2200mA Power Added Efficiency at 1dB Compression f = 4.90-5.30GHz VDS = 10 V, IDSQ 2200mA Drain Current at 1dB Compression f = 4.90-5.30GHz Output 3rd Order Intermodulation Distortion f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L Vds = 10 V, IDSQ 65% IDSS f = 5.30GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance3 2. S.C.L. = Single Carrier Level. Caution! ESD sensitive device. MIN 38.5 9.5 TYP 39.5 10.5 MAX UNITS dBm dB 0.6 35 2300 -43 -46 4000 -2.5 3.5 5000 -4.0 4.0 o dB % 2600 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA Note: 1. Tested with 100 Ohm gate resistor. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 86.4mA -14.4mA 38.5dBm 175 oC -65 to +175 oC 38W CONTINUOUS2 10V -4.5V 28.8mA -4.8mA @ 3dB Compression 175 oC -65 to +175 oC 38W Vds Vgs Igsf Igsr Pin Tch Tstg Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised February 2008 EIC4953-8 ISSUED 02/28/2008 4.90-5.30 GHz 8-Watt Internally Matched Power FET PACKAGES OUTLINE Dimensions in inches, Tolerance + .005 unless otherwise specified EIC4953-8 (Hermetic) EIC4953-8NH (Non-Hermetic) Excelics EIC4953-8 .827.010 .669 .120 MIN .024 .421 Excelics EIC4953-8NH YYWW SN .120 MIN YYWW SN .125 .508.008 .442 .168.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105.008 ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. Caution! ESD sensitive device. ORDERING INFORMATION Part Number EIC4953-8 EIC4953-8NH Notes: Packages Hermetic Non-Hermetic Grade1 Industrial Industrial fTest (GHz) 4.90-5.30GHz 4.90-5.30GHz P1dB (min) 38.5 38.5 IM3 (min)2 -43 -43 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in "Electrical Characteristics" table. DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised February 2008 |
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