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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD389 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) *Wide Area of Safe Operation *High Power Dissipation APPLICATIONS *Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 60 60 8 3.0 25 UNIT V .cn mi e V V IC Collector Current-Continuous Collector Power Dissipation @ TC=25 A PC W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD389 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.2A; L= 25mH 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.0 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 3V 1.4 V ICBO Collector Cutoff Current VCB= 20V; IE= 0 30 A IEBO Emitter Cutoff Current VEB= 8V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-2 Classifications Q 30-60 P 50-100 w O 80-160 w. w sem isc IC= 0.1A; VCE= 3V IC= 1A; VCE= 3V .cn i 40 30 1.0 mA 160 isc Websitewww.iscsemi.cn 2 |
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