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| SMG6402 -4.2A, -20V,RDS(ON) 65m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Description The SMG6402 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SMG6402 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. L A SC-59 Dim A Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 S 2 3 Top View B 1 B C D D G G H C J K Features * Ultra low RDS(ON) * Fast switching Gate J K L H Drain S D Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System All Dimension in mm Source G Marking : 6402 S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -20 12 -4.2 -3.4 -10 1.38 0.01 -55~+150 Unit V V A A A W W/ C o o 3 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 90 Unit o C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG6402 Elektronische Bauelemente -4.2A, -20V,RDS(ON) 65m[ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 oC) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance 2 o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. -20 _ Typ. _ Max. _ _ Unit V V/ oC V nA uA uA Test Condition VGS=0V, ID=-250uA Reference to 25 C ,ID=-1mA VDS=VGS, ID=-250uA VGS= 12V VDS=-20V,VGS=0 VDS=-16V,VGS=0 VGS=-4.5V, ID=-3.7A VGS=-2.5V, ID=-3.1A o -0.1 _ _ _ _ _ _ -0.5 _ _ _ _ _ 100 -1 -10 65 135 _ _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ m[ Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 2 10.6 2.32 3.68 5.9 3.6 32.4 2.6 740 167 126 9 nC ID=-4.2A VDS=-16V VGS=-4.5V _ _ _ _ VDS=-15V ID=-4.2A nS VGS=-10V RG=6[ RD=3.6[ _ _ _ pF VGS=0V VDS=-15V f=1.0MHz _ _ S VDS=-5V, ID=-2.8A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Trr Qrr Min. _ _ Typ. _ Max. -1.2 _ Unit V Test Condition IS=-1.2A, VGS=0V. Is=4.2A,VGS=0V dl/dt=100A/uS Reverse Recovery Time Reverse Recovery Charge 27.7 nS _ 22 _ nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SMG6402 Elektronische Bauelemente -4.2A, -20V,RDS(ON) 65m [ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SMG6402 Elektronische Bauelemente -4.2A, -20V,RDS(ON) 65m [ P-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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