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1000M HCTS08MS HGT1S MAX1639 C5071 CS82C55A 56083 10602
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  Datasheet File OCR Text:
 DC COMPONENTS CO., LTD.
R
2SC4242
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for high speed switching applications.
TO-220AB
Pinning
1 = Base 2 = Collector 3 = Emitter
.405(10.28) .380(9.66) .185(4.70) .173(4.40) .151 Typ .055(1.39) (3.83) .045(1.15) .295(7.49) .220(5.58)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
Symbol VCBO VCEO VEBO IC IB PD TJ TSTG
Rating 450 400 10 7 2 40 +150 -55 to +150
Unit V V V A A W
o o
.625(15.87) .570(14.48) 123
.350(8.90) .330(8.38)
.640 Typ (16.25)
.055(1.40) .045(1.14) .037(0.95) .030(0.75)
.562(14.27) .500(12.70)
.100 Typ (2.54)
.024(0.60) .014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 hFE3 380s, Duty Cycle 2%
Min 450 450 10 15 10 10
Typ -
Max 100 100 0.8 1.2 55 -
Unit V V V A A V V -
Test Conditions IC=1mA, IE=0 IC=100mA, IB=0 IE=1mA, IC=0 VCB=450V, IE=0 VEB=10V, IC=0 IC=4A, IB=0.8A IC=4A, IB=0.8A IC=0.8A, VCE=5V IC=2A, VCE=5V IC=4A, VCE=5V
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain
(1)
(1)Pulse Test: Pulse Width
Classification of hFE1
Rank Range A 15~28 B1 22~35 B2 29~42 B3 36~49 B4 43~55


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