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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION *With TO-220C package *Complement to type 2SD1196 *DARLINGTON *High DC current gain *High current capacity and wide ASO *Low saturation voltage APPLICATIONS *Motor drivers, printer *Hammer drivers *Relay drivers, *Voltage regulator control. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SB886 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak TC=25 PC Collector dissipation 1.75 Tj Tstg Junction temperature Storage temperature 150 -50~150 Open emitter Open base Open collector CONDITIONS VALUE -110 -100 -6 -8 -12 40 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current Transition frequency DC current gain CONDITIONS IC=-50mA; RBE=? IC=-5mA; IE=0 IC=-4A; IB=-8mA IC=-4A; IB=-8mA VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-4A ; VCE=-5V IC=-4A ; VCE=-3V 1500 20 4000 MIN -100 -110 -1.0 TYP. 2SB886 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO fT hFE MAX UNIT V V -1.5 -2.0 -0.1 -3.0 V V mA mA MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-4A;IB1=-IB2=-8mA RL=12.5E,Duty cycleF1% VCC=50V 0.7 1.4 1.5 s s s 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB886 Fig.2 Outline dimensions (unindicated tolerance:0.10mm) 3 |
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