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MC54H 3R150B SQ1035 R3A2BZA6 100BZ F1007 EDI8810H IRLS4030
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 SK 50 GH 065 F
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
Inverse / Freewheeling Diode
SEMITOP(R) 3 IGBT Module
SK 50 GH 065 F Target Data
Characteristics Symbol Conditions IGBT
min.
typ.
max.
Units
Features
Inverse / Freewheeling Diode
Typical Applications
Mechanical data
GH
1
03-03-2006 DIL
(c) by SEMIKRON
SK 50 GH 065 F
Fig.5 Typ. output characteristic, tp = 250 s, 25 C
Fig.6 Typ. output characteristic, tp = 25 s, 125 C
Fig.7 Turn-on / -off energy = f (IC)
Fig.8 Turn-on / -off energy = f (RG)
Fig.9 Typ. gate charge characteristic
Fig.10 Typ. capacitances vs. VCE
2
03-03-2006 DIL
(c) by SEMIKRON
SK 50 GH 065 F
Fig.11 Typ. switching times vs. IC
Fig.12 Typ. switching times vs. gate resistor RG
3
03-03-2006 DIL
(c) by SEMIKRON
SK 50 GH 065 F
UL Recognized File no. E 63532 Dimensions in mm
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
4
03-03-2006 DIL
(c) by SEMIKRON


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