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| DATA SHEET LND820/821/822/823 POWER MOSFET GENERAL DESCRIPTION The LND820 series provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. FEATURES * VDSS =450V-500V RDS (on) = 3.0 -4.0 ID=2.2A and 2.5A * * * * * Dynamic dv/dt Rating Repetitive Avalanche rated Fast Switching Ease of Paralleling Simple Drive Requirement SYMBOL PIN DIAGRAM TO-220 * Linear Dimensions, Inc. * 445 East Ohio Street, Chicago IL 60611 USA * tel 312.321.1810 * fax 312.321.1830 * www.lineardimensions.com * LND820/821/822/823 ABSOLUTE MAXIMUM RATING Symbol ID@Tc=25C ID@Tc=100C IDM PD @Tc=25C ID@Tc=25C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current,VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current(1) Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy(2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt(3) Operating Junction and Storage temperature Range Soldering Temperature, for 10 seconds Max 2.5 1.6 8.0 50 0.40 20 210 2.5 5.0 3.5 -55 to +150 300 (1.6mm from case) Units A W W/C V mJ A mJ V/ns C THERMAL RESISTANCE Symbol RoJC RoCS RoJA Parameter Junction-to-case Case-to-Sink, Flat, Greased Surface Junction-to-Ambint Min - Typ 0.50 - Max 2.5 62 Units C/W * Linear Dimensions, Inc. * 445 East Ohio Street, Chicago IL 60611 USA * tel 312.321.1810 * fax 312.321.1830 * www.lineardimensions.com * LND820/821/822/823 ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise specified) Symbol V(BR)DSS V(BR)DSS / TJ ID(on) RDS(ON) VGS(th) gfs IDSS IGSS Parameter Drain-to-source Breakdown Voltage Breakdown Voltage Temp. Coefficient On-State Drain Current(Note 2) Static Drain-to-Source OnResistace Gate Threshold Voltage Forward Transconductance Drain-to-source Leakage Current (TC=125C) Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-drain("Miller") Charge Turn-on Delay Time Rise time Turn-off Delay time Fall time Internal Drain Inductance Input Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance LND820/821 LND821/823 LND820/821 LND822/823 LND-820/822 LND821/823 Conditions VGS=0V, ID = 250A Reference to 25C ID=1mA VGS > ID(on) x RDS(on)Max, VGS=10V VGS =0V,ID =1.5A(4) VDS=VGS, ID=250A VDS=50V,ID =1.5A(4) VDS=500V,VGS =0V VDS= 400V,VGS = 0V VGS=-20V VGS=-20V ID=2.1A VDS=400V VGS =10V (4) VDD =250V ID=2.1A RG=18 RD=100 (4) Between lead 6mm (0.25 in.) From package and center of die contact VGS=0V VDS=25V F=1.0 MHz Min 500 450 2.5 2.2 Typ 0.59 - Max 3.0 4.0 Units V V/C A V S A A nA 2.0 1.5 - - 4.0 25 250 8.0 8.6 33 16 4.5 100 -100 24 3.3 13 Qg Qqs nC td(on) tr td(off) tf LD LS Ciss Coss Crss ns nH 7.5 360 92 37 pF * Linear Dimensions, Inc. * 445 East Ohio Street, Chicago IL 60611 USA * tel 312.321.1810 * fax 312.321.1830 * www.lineardimensions.com * LND820/821/822/823 SOURCE-DRAIN RATING AND CHARACTERISTICS Symbol IS ISM VSD trr Qrr tON Parameter Continuous Source Current Pulsed Source Current (Body Diode) (1) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Conditions MOSFET symbol showing the integral reverse p-n junction diode TJ=25C, IS=2.5A, VGS=0V(4) TJ=25C, IF=2.1A, di/dt=100A/s (4) Min Typ Max 2.5 A 8.0 1.6 520 V nS Units 0.70 1.4 C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes : 1 : Repetitvie rating :pulse width limited by max. junction temperature 2 : VDD=50V, starting TJ =25C,L=60mH RG=25, IAS =2.5A 3 : ISD 2.5A, di/dt50 A/s, VDD V(BR)DSS ,TJ150C 4 : Pulse width 300s; duty cycle 2% * Linear Dimensions, Inc. * 445 East Ohio Street, Chicago IL 60611 USA * tel 312.321.1810 * fax 312.321.1830 * www.lineardimensions.com * |
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