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| Excelics TENTATIVE DATA SHEET EIA5060-1S 5.0-6.0GHz, 1W Internally Matched Power FET * * * * * 5.0-6.0GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM FEATURES HIGH PAE(35% TYPICAL) 31.0dBm TYPICAL P1dB OUTPUT POWER 13dB TYPICAL G1dB POWER GAIN NON-HERMETIC 180 MIL METAL FLANGE PACKAGE ELECTRICAL CHARACTERISTICS (Ta = 25 O C) EIA0506-1P180F SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=5.0-6.0GHz Vds=8V, Idsq=0.5 Idss Gain at 1dB Compression Vds=8V, Idsq=0.5 Idss f=5.0-6.0GHz MIN 29.5 11 TYP 31.0 13 MAX UNIT dBm dB P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth Power Added Efficiency at 1dB compression f=5.06.0GHz Vds=8V, Idsq=0.5 Idss Drain Current at 1dB Compression Output 3 Order Intercept Point Vds=8V, Idsq=0.5 Idss rd 35 440 37 550 720 760 -1.0 -13 -15 16 o % mA dBm 850 mA mS -2.5 V V C/W f=5.0-6.0GHz Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=6mA Drain Breakdown Voltage Igd=4.8mA Thermal Resistance (Au-Sn Eutectic Attach) MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 90mA 29dBm 175oC -65/175 C 8.5W o CONTINUOUS2 8V -3V Idss 15mA @ 3dB Compression 150oC -65/150oC 7.1W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com |
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