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1N-SS119
SILICON EPITAXIAL PLANAR DIODE
for High Speed Switching
Max. 0.45
Features * Low capacitance * Short reverse recovery time
Max. 1.9
Min. 27.5
Black Cathode Band Black Part No.
XXX
Max. 2.9
Min. 27.5
Glass Case DO-34 Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage Reverse Voltage Average Rectified Current Peak Forward Current Non-Repetitive Peak Forward Surge Current (t = 1 s) Power Dissipation Junction Temperature Storage Temperature Range
Symbol VRM VR IO IFM IFSM Pd Tj TS
Value 35 30 150 450 1 250 175 - 65 to + 175
Unit V V mA mA A mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter Forward Voltage at IF = 10 mA Reverse Current at VR = 30 V Capacitance at VR = 1 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA VR = 6 V,RL = 50 Symbol VF IR C trr Max. 0.8 0.1 3 3.5 Unit V A pF ns
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 23/06/2007
1N-SS119
Fig.1-Forward current Vs. Forward voltage 10
-1
Fig.2- Reverse current Vs. Reverse voltage 10
-4
10 -5
Forward current IF (A) Reverse current I R (A)
Ta=125 oC
10 -2
Ta=1 o 25 C T a= o 75 C Ta=25 o C
10-6
Ta=75 C
o
Ta=-2 o 5C
10 -7
10 -3 10 -8 Ta=25 C
o
10 -4 0 0.2 0.4 0.6 0.8 1.0 1.2
10 -9 0
10
20
30
40
50
Forward votlage VF (V)
Reverse voltage VR (V)
Fig.3- Capacitance Vs. Reverse voltage f=1MHz
10
Capacitance C (pF)
1.0
0.1 1.0 10 Reverse voltage VR (V) 100
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 23/06/2007

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