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| ST 2SA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor ST 2SC945 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 60 50 5 150 250 150 -55 to +150 Unit V V V mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 12/07/2002 ST 2SA733 Characteristics at Tamb=25 oC Symbol DC Current Gain at -VCE=6V, -IC=1mA Current Gain Group R O Y P L Collector Base Breakdown Voltage at -IC=100A Collector Emitter Breakdown Voltage at -IC=10mA Emitter Base Breakdown Voltage at -IE=10A Collector Cutoff Current at -VCB=60V Emitter Cutoff Current at -VEB=5V Collector Saturation Voltage at -IC=100mA, -IB=10mA Base Emitter Voltage at -VCE=6V, -IC=1mA Gain Bandwidth Product at -VCE=6V, -IC=10mA Output Capacitance at -VCB=10V, f=1MHz Noise Figure at -VCE=6V, -IC=0.3mA at f=100Hz, RS=10K F 6 20 dB COB 2.8 pF fT 50 180 MHz -VBE(on) 0.5 0.62 0.8 V -VCE(sat) 0.18 0.3 V -IEBO 0.1 A -ICBO 0.1 A -V(BR)EBO 5 V -V(BR)CEO 50 V -V(BR)CBO 60 V hFE hFE hFE hFE hFE 40 70 120 200 350 80 140 240 400 700 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 12/07/2002 ST 2SA733 Total power dissipation vs. ambient temperature 300 Free air I C - VBE -200 VCE=-6V -100 Ta=75 C 250 IC - mA Ptot (mW) 200 150 100 50 -10 50 C 25 C 0C -1 -25 C 0 25 50 75 100 125 150 -0.1 -0.4 -0.5 -0.6 -0.7 VBE, V -0.8 -0.9 -1 Tamb ( C) Collector current vs. collector emitter voltage Collector current vs. collector emitter voltage -100 -80 -60 Ic - mA -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -10 -8 -6 Ic - mA -45 -40 -35 -30 -25 -20 -15 -10 -0.4 -40 I B=-0.2mA -4 -2 0 0 -20 0 0 IB=-5 A -0.2 -0.4 -0.6 VCE, V -0.8 -1.0 -10 -20 -30 -40 -50 VCE, V hFE - I C 1000 1000 hFE - I C VCE=-6V 50 C Ta=75 C VCE=-6V -1V hFE hFE 100 100 25 C 0C -25 C 10 -0.1 -1 -10 -100 10 -0.1 -1 -10 -100 I C, mA I C, mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 12/07/2002 ST 2SA733 VCE(sat), VBE(sat) - IC -1 fT - IE VBE(sat) 500 VCE= -6V -1V VCE(sat), VBE(sat) - V -0.1 VCE(sat) fT - MHz 100 -0.01 -1 IC/IB=10 -10 -100 10 1 IC/IB=10 10 100 I C, mA I E, mA Normalized h-parameters vs. collector emitter voltage 100 Normalized h parameters hfe=20s, hoe=28 s Normalized h-parameters vs. emitter current 100 Normalized h parameters VCE=-6V, IE=1mA, f=1kHz -4 hie=5.5k , hre=7.5x10 hfe=20s, hoe=28 s VCE=-6V, IE=1mA, f=1kHz -4 hie=5.5k , hre=7.5x10 10 10 hie hre hoe 1 hoe hre hfe hie hie hfe hre hoe 1 hfe hoe hfe 0.1 -0.1 -1 VCE, V -10 -100 0.1 0.1 hie hre 1 IE, mA 10 100 Cob - VCB 100 f=1MHz Cob - pF 10 1 -1 -10 -100 VCB, V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 12/07/2002 |
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