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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1490 DESCRIPTION *High DC Current Gain: hFE= 5000(Min)@IC= -6A *Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A *Complement to Type 2SD2250 APPLICATIONS *Designed for power amplifier applications *Optimum for 80W HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE -160 V -140 V -5 V -7 A -12 A 90 W UNIT .cn mi e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 3.5 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= -30mA; IB= 0 IC= -6A; IB= -6mA B 2SB1490 MIN -140 TYP. MAX UNIT V -2.5 -3.0 -100 -100 -100 V V A A A IC= -6A; IB= -6mA B VCB= -160V; IE= 0 VCE= -140V; IB= 0 Current-Gain--Bandwidth Product Switching Times ton tstg tf Turn-on Time Storage Time Fall Time w w P w. .cn mi cse is VEB= -5V; IC= 0 IC= -1A; VCE= -5V 2000 IC= -6A; VCE= -5V 5000 IC= -0.5A; VCE= -10V IC= -6A; IB1= -IB2= -6mA, VCC= -50V 30000 20 MHz 1.0 1.5 1.2 s s s hFE-2 Classifications Q 5000-15000 8000-30000 isc Websitewww.iscsemi.cn 2 |
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