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 Preliminary
SIM200D06AV2
VCES = 600V Ic= 200A VCE(ON) typ. = 1.6V @Ic= 200A
"HALF-BRIDGE" IGBT
Feature
design technology Low VCE (sat) Low Turn-off losses Short tail current for over 20KHz
Applications
Motor controls VVVF inverters Inverter-type welding MC over 18KHZ SMPS, Electrolysis UPS/EPS, Robotics
PKG: V2=48mm
Absolute Maximum Ratings @ Tj=25
Symbol
VCES VGE IC ICP IF IFM tp Viso Weight Tj Tstg Md
(Per Leg) Condition
TC =
Parameter
Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short circuit test, VGE = 15V, VCC = 360V Isolation Voltage test Weight of Module Junction Temperature Storage Temperature Mounting torque with screw : M5 Terminal connection torque : M5 TC = 80 TC = TC = 80 TC = TC = 150
Ratings
600 20 200 (290) 450 200 (290) 400
Unit
V V A A A A
25
6 (8) 2500 190 -40 ~ 150 -40 ~ 125 2.0 2.0 N.m N.m V g
AC @ 1 minute
Static Characteristics @ Tj = 25
Parameters
VCE(ON) VGE(th) ICES IGES VF RGINT Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Forward voltage drop Integrated gate resistor
(unless otherwise specified) Min Typ
1.60 5.8
Max
1.95
Unit
V
Test conditions
IC = 200A, VGE = 15V VCE = VGE, IC = 4 VGE= 0V, VCE = 600V VCE = 0V, VGE = IF = 200A V
6.5 5.0 400
1.6 2
1.9
Preliminary
Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25
Parameters
Ciss Coss Crss td(on) tr td(off) tf VBR IRM trr Qrr Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Cathode-Anode breakdown Voltage Maximum Reverse Leakage Current Reverse Recovery Time Reverse Recovery Charge 130 9 600 250 ns C
SIM200D06AV2
(unless otherwise specified) Unit Test conditions
VCE = 25V, VGE = V f = 1 MHz
Min
Typ
9200 580 270 145 30
Max
pF
Inductive Switching (125 VCC = 300V ns IC = 200A, VGE = RG = 2 V VR = 600V IF = 200A, VR = 300V di / dt = 2200A / 15V
340 60
Thermal Characteristics
Symbol
RJC RJC RCS
Parameter
Junction-to-Case (IGBT Part, Per 1/2 Module) Junction-to-Case (Diode Part, Per 1/2 Module) Case-to-Heat Sink (Conductive grease applied)
Min
-
Typ
0.025
Max
0.20 0.3 -
Unit
/W
specifications
Preliminary
Fig.1, Output characteristic (typical) IC = f(TVJ)
VGE = 15V
SIM200D06AV2
Output characteristic (typical) IC = f(VGE)
Tvj = 150
Fig.2,
Fig.3, Transfer characteristic (typical) IC = f(TVJ)
VCE = 20V
Fig.4, Reverse bias safe RBSOA) IC = f(VGE)
VGE
=
15V, RGoff = 2.4 , Tvj = 150
Fig.5, Forward characteristic of diode (typical) IF = f(TVJ)
Preliminary Package Outline (dimensions in mm)
SIM200D06AV2
Data and specifications subject to change without any of notice
JULY 2008
Headquarter:
#602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu, Bucheon-City, S.KOREA Tel)+82-32-234-4781, Fax)+82-32-234-4789
Sales & Marketing clzhang@semwiell.com sales@semiwell.com


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