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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2520DX DESCRIPTION *With TO-3PML package *High voltage,high speed *Built-in damper diode APPLICATIONS *For use in horizontal deflection circuits of large screen coluor TV receivers PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current (DC) Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 800 7.5 10 25 6 9 45 150 -55~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IE=600mA ;IC=0 IC=6A ;IB=1.2A IC=6A ;IB=1.2A VCE=BVCES; VBE=0 TC=125 VEB=7.5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IF=6A IE=0 ; VCB=10V;f=1MHz 5 100 MIN 800 7.5 BU2520DX SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF CC TYP. MAX UNIT V 13.5 5.0 1.1 1.0 2.0 300 13 7 9.5 2.2 115 V V V mA mA V pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2520DX Fig.2 Outline dimensions 3 |
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