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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1457 2SD1457A
DESCRIPTION With TO-3PFa package High DC current gain DARLINGTON High VCBO APPLICATIONS For power amplification
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PFa) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO

PARAMETER
Collector-base voltage
VCEO
INC
Collector-emitter voltage
E SEM ANG H
2SD1457 2SD1457A
Open emitter
OND IC
CONDITIONS
TOR UC
MAX 200 150 200 5 6 10
UNIT V
Open base
V
VEBO IC ICM
Emitter-base voltage Collector current Collector current-peak
Open collector
V A A
TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature
60 W 3.0 150 -55~150 ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER 2SD1457 VCEO(SUS) Collector-emitter sustaining voltage 2SD1457A V(BR)EBO VCEsat VBEsat ICBO hFE fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Transition frequency IE=0.1A ;IC=0 IC=3A ;IB=60mA IC=3A ;IB=60mA VCB=200V; IE=0 IC=2A ; VCE=2V IC=0.5A ; VCE=10V;f=1MHz IC=2A ;L=10mH CONDITIONS
2SD1457 2SD1457A
SYMBOL
MIN 150
TYP.
MAX
UNIT
V 200 5 1.5 2.5 100 700 15 10000 |I V V V A
hFE Classifications Q P
IN

O
700-2500
2000-5000
ANG CH
4000-10000
MIC E SE
DUC ON
TOR
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1457 2SD1457A

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 outline dimensions (unindicated tolerance:A
0.30mm)
3


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