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| 2SA1576A PNP Silicon Elektronische Bauelemente RoHS Compliant Product Epitaxial Planar Transistor Description The 2SA1576A is designed for use in driver stage of AF amplifier and general purpose amplificaion. Feature *Complements the 2SC4081 REF. A A1 A2 D E HE Millimeter Min. 0.80 0 0.80 1.80 1.15 1.80 Max. 1.10 0.10 1.00 2.20 1.35 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absol ute Maximum Ratings at Ta = 25 C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction and Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj, Tstg o o Ratings -60 -50 -6 -150 225 -55~+150 Unit V V V mA mW o C Characteristics at Ta = 25 C Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Cutoff Current Collector Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min -60 -50 -6 120 - Typ. 140 4 Max -100 -100 -500 560 5 Unit V V V nA nA mV MHz pF Test Conditions IC=-50uA IC=-1mA IE=-50uA VCB=-60V VEB=-6V IC=-50mA, IB=-5 mA VCE=-6V, IC=-1mA VCE=-12V, IC=-2mA, f=100MHz VCB=-12V, f=1MHz, IE=0 Classification of hFE Rank Range 5AQ 120 - 270 5AR 180 - 390 5AS 270 - 560 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2SA1576A PNP Silicon Elektronische Bauelemente Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2SA1576A PNP Silicon Elektronische Bauelemente Epitaxial Planar Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3 |
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