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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Designed for high voltage switching applications such as : Off-line power supplies Converter circuits Pulse width modulated regulators PINNING (See Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2N6676 2N6677 2N6678 Absolute maximum ratings(Ta=ae ) SYMBOL PARAMETER Collector 2N6676 2N6677 Fig.1 simplified outline (TO-3) and symbol VCBO HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature SEM GE 2N6678 2N6676 2N6677 2N6678 Open base CONDITIONS OND IC TOR UC VALUE 450 550 650 300 350 400 UNIT Open emitter V VCEO V VEBO IC ICM IB PT Tj Tstg Open collector 8 15 20 5 V A A A W ae ae Tc=25ae 175 200 -65~200 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N6676 VCEO(SUS) Collector-emitter sustaining voltage 2N6677 2N6678 VCEsat VBEsat ICEV IEBO hFE-1 hFE -2 COB fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain IC=15A; IB=3A IC=15A; IB=3A IC=0.2A ; IB=0 2N6676 2N6677 2N6678 SYMBOL CONDITIONS MIN 300 350 400 TYP. MAX UNIT V 1.5 1.5 0.1 1.0 2.0 15 8 50 V V mA mA VCE=RatedVCEV;VBE(off)=-1.5V TC=100ae VEB=8V; IC=0 IC=1A ; VCE=5V IC=15A ; VCE=3V IE=0 ;VCB=10V;f=0.1MHz DC current gain Output capacitance Transition frequency Switching times td tr ts tf Delay time Rise time HAN INC SEM GE IC=1A ; VCE=10V;f=5.0MHz OND IC TOR UC 500 0.2 |I |I |I |I pF MHz 3 s s s s Storage time Fall time IC=15A; IB1=-IB2=3.0A VCC=200V; tp=20|I s; Duty CycleU 2.0% VBB=6V,RL=1.35| 0.6 2.5 0.6 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT ae /W 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6676 2N6677 2N6678 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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