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 P
ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som
IM REL
Y NAR I
MITSUBISHI SEMICONDUCTOR
M63805P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
PIN CONFIGURATION
IN1 IN2 IN3 INPUT
1 2 3 18 O1 17 O2 16 O3 15 O4 14 O5 13 O6 12 O7 11 O8 10
DESCRIPTION M63805P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
IN4 4 IN5
5
OUTPUT
IN6 6
FEATURES q Three package configurations (P, FP, and KP) q Medium breakdown voltage (BVCEO 35V) q Synchronizing current (IC(max) = 300mA) q With zener diodes q Low output saturation voltage q Wide operating temperature range (Ta = -40 to +85C)
IN7 IN8 GND
7 8 9
NC
Package type 18P4G(P)
NC
1
20
NC
IN1 2 IN2 3
19 O1 18 O2 17 O3 16 O4 15 O5 14 O6 13 O7 12 O8 11 NC
APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals
IN3 4 IN4 5 INPUT IN5 6 IN6 7 IN7 8 IN8 9
OUTPUT
FUNCTION The M63805P/FP/KP each have eight circuits consisting of NPN transistor. The transistor emitters are all connected to the GND pin. The transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter.
GND
10
NC : No connection
20P2N-A(FP)
Package type 20P2E-A(KP)
CIRCUIT DIAGRAM
OUTPUT
Vz=7V INPUT 10.5K 10K GND The eight circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit:
Jan. 2000
P
ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som
IM REL
Y NAR I
MITSUBISHI SEMICONDUCTOR
M63805P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO IC VI Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature
(Unless otherwise noted, Ta = -40 ~ +85C)
Conditions Output, H Current per circuit output, L M63805P M63805FP M63805KP
Ratings -0.5 ~ +35 300 -0.5 ~ +35 1.79 1.10 0.68 -40 ~ +85 -55 ~ +125
Unit V mA V W C C
Ta = 25C, when mounted on board
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = -40 ~ +85C)
Symbol VO Parameter Output voltage Collector current IC (Current per 1 circuit when 8 circuits are coming on simultaneously) VIN Input voltage M63805P M63805FP M63805KP Duty Cycle no more than 50% Duty Cycle no more than 100% Duty Cycle no more than 30% Duty Cycle no more than 100% Duty Cycle no more than 12% Duty Cycle no more than 100% Test conditions Limits min 0 0 0 0 0 0 0 0 typ -- -- -- -- -- -- -- -- max 35 250 170 250 130 250 100 30 Unit V
mA
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25C)
Symbol V (BR) CEO VCE(sat) VIN(on) hFE Parameter Collector-emitter breakdown voltage Test conditions Limits min 35 -- -- 13 50 typ -- -- -- 19 -- max -- 0.2 0.8 23 -- Unit V V V --
ICEO = 10A IIN = 1mA, IC = 10mA Collector-emitter saturation voltage IIN = 2mA, IC = 150mA "On" input voltage IIN = 1mA, IC = 10mA DC amplification factor VCE = 10V, IC = 10mA
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C)
Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min -- -- typ 140 240 max -- -- Unit ns ns
Jan. 2000
P
ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som
IM REL
Y NAR I
MITSUBISHI SEMICONDUCTOR
M63805P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
TIMING DIAGRAM
Vo 50% 50%
NOTE 1 TEST CIRCUIT
INPUT
Measured device PG
RL OUTPUT
INPUT
OUTPUT 50 CL 50% 50%
ton (1)Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50, VIH = 18V (2)Input-output conditions : RL = 220, Vo = 35V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes
toff
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics 2.0
M63805P
Input Characteristics 4
Power dissipation Pd (W)
Input current II (mA)
1.5
M63805FP
3
Ta = -40C Ta = 25C
1.0
M63805KP
0.931
2
0.5
0.572 0.354
1
Ta = 85C
0
0
25
50
75 85
100
0
0
5
10
15
20
25
30
Ambient temperature Ta (C) Duty Cycle-Collector Characteristics (M63805P) 400 400
Input voltage VI (V) Duty Cycle-Collector Characteristics (M63805P)
Collector current Ic (mA)
300
~
Collector current Ic (mA)
300
~
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C
200
200
100
0 0
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C
100
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
Jan. 2000
P
ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som
IM REL
Y NAR I
MITSUBISHI SEMICONDUCTOR
M63805P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
Duty Cycle-Collector Characteristics (M63805FP) 400 400
Duty Cycle-Collector Characteristics (M63805FP)
Collector current Ic (mA)
300
200
~
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C
Collector current Ic (mA)
300

200
100
100
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C

0
0
20
40
60
80
100
0
0
20
40
60
80
100
Duty cycle (%) Duty Cycle-Collector Characteristics (M63805KP) 400 400
Duty cycle (%) Duty Cycle-Collector Characteristics (M63805KP)
Collector current Ic (mA)
300
~
Collector current Ic (mA)
300

200

*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C
200
100
100
0
0
20
40
60
80
100
0
*The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 85C
0
20
40
60
80
100
Duty cycle (%) Output Saturation Voltage Collector Current Characteristics 250
Ta = 25C IB = 2mA IB = 3mA
Duty cycle (%) Output Saturation Voltage Collector Current Characteristics 100
Ta = 25C VI = 32V
Collector current Ic (mA)
Collector current Ic (mA)
200
IB = 1.5mA IB = 1mA
80
VI = 28V VI = 24V VI = 20V VI = 16V
150
60
100
IB = 0.5mA
40 20
VI = 12V
50
0 0
0.2
0.4
0.6
0.8
0
0
0.05
0.10
0.15
0.20
Output saturation voltage VCE(sat) (V)
Output saturation voltage VCE(sat) (V)
Jan. 2000
P
ion. ange. h icat ecif ct to c l sp fina e subje ot a its ar is n m This etric li ice: m Not e para Som
IM REL
Y NAR I
MITSUBISHI SEMICONDUCTOR
M63805P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
Output Saturation Voltage Collector Current Characteristics 100
II = 2mA
DC Amplification Factor Collector Current Characteristics 103
DC amplification factor hFE
7 5 3 2 VCE 10V Ta = 25C
Collector current Ic (mA)
80
Ta = -40C
Ta = 25C Ta = 85C
60
102
7 5 3 2
40 20
0
0
0.05
0.10
0.15
0.20
101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Collector current Ic (mA)
Output saturation voltage VCE(sat) (V)
Grounded Emitter Transfer Characteristics 50
VCE = 4V
Grounded Emitter Transfer Characteristics 250
VCE = 4V
Collector current Ic (mA)
Collector current Ic (mA)
40
200 150
Ta = 85C Ta = 25C
30
Ta = 25C
20
Ta = 85C Ta = -40C
100 50
Ta = -40C
10
0 0
2
4
6
8
10
12
0 0
4
8
12
16
20
Input voltage VI (V)
Input voltage VI (V)
Jan. 2000


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