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HWL30NPA
L-Band GaAs Power FET
Autumn 2002 V1
Features
* * * *
Low Cost GaAs Power FETs Class A or Class AB Operation High Efficiency 3V to 6V Operation
1 Pin 1: Source Pin 2: Gate Pin 3: Drain
Description
The HWL30NPA is a Medium Power GaAs FET using surface mount type plastic package for various L-band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.
2
1
3
Absolute Maximum Ratings
VDS VGS ID IG TCH TSTG PT
* *
Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Total Power Dissipation
+7V -5V IDSS 3mA 150C -65 to +150C 2.8W
PA Package (SOT-89)
Outline Dimensions
mounted on an infinite heat sink.
Electrical Specifications (TA=25C) f = 1900 MHz for all RF Tests
Symbol IDSS VP gm Rth P1dB Parameters & Conditions Saturated Current at VDS=3V, VGS=0V Pinch-off Voltage at VDS=3V, ID=30mA Transconductance at VDS=3V, ID=300mA Thermal Resistance Power Output at 1dB Compression Point VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS Gain at 1dB Compression Point VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS Power-Added Efficiency (POUT = P1dB) VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS Units mA V mS C/W dBm Min. 500 -3.5 200 24.5 27.5 9 10 Typ. 600 -2.0 300 35 25.5 28.5 10 11 40 40 Max. 900 -1.5 45 -
G1dB
dB
-
PAE
%
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL30NPA
L-Band GaAs Power FET
Autumn 2002 V1
Typical Performance at 25C
Output Power & Efficiency vs Vds
@ f=0.9GHz,Ids=0.5IDSS Po (dBm) 35 30 25 20 15 10 1 2 3 4 5 PAE (%) 60 55 50 45 40 35 6 Vds (V) Po PAE
Output Power & Efficiency vs Vds
@ f=1.9GHz,Ids=0.5IDSS Po (dBm) 35 30 25 20 15 10 1 2 3 4 5 PAE (%) 60 55 50 45 40 35 6 Vds (V) Po PAE
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL30NPA
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power @ f=0.9GHz, Vds=3V
Po (dBm) 30 25 20 15 10 Gain 5 0 0 4 8 12
PAE (%) 60 50 40 30 20 10 0 16 Pin (dBm) Po Gain Eff
Output Power & Efficiency & Gain vs Input Power @ f=1.9GHz, Vds=3V
Po (dBm) 30 25 20 15 10 Gain 5 0 0 5 10 15 20
PAE (%) 60 50 40 30 20 10 0 25 Pin (dBm) Po Gain Eff
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL30NPA
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=5V, IDS=0.5IDSS
Po (dBm) 30 25 20 15 Gain 10 5 0 0 4 8 12
PAE (%) 70 60 50 40 30 20 10 0 16 Pin (dBm) Po Gain Eff
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=5V, IDS=0.5IDSS Po (dBm) 30 25 20 15 Gain 10 5 0 1 3 5 7 9 11 13 15 17 19 21
PAE (%) 70 60 50 40 30 20 10 0 Pin (dBm) Po Gain Eff
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL30NPA
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Frequency @ Vds=3V, Ids=300mA
Po (dBm) 30 25 20 15 10 Gain 5 0 0.7 0.8 0.9 1.0 1.1 45 40 35 f (GHz) PAE (%) 60 55 50 Po Gain PAE
Output Power & Efficiency & Gain vs Frequency @ Vds=5V, Ids=300mA
Po (dBm) 30 25 20 15 10 Gain 5 0 1.6 1.7 1.8 1.9 2.0 2.1 PAE (%) 60 50 40 30 20 10 0 f (GHz) Po Gain PAE
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL30NPA
L-Band GaAs Power FET
Autumn 2002 V1
Power Derating Curve
4
Total Power Dissipation,PT (W)
(25,2.8) 2
(150,0) 0 0 50 100 150
Case Temperature,TC ()
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
HWL30NPA
L-Band GaAs Power FET
Autumn 2002 V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES VDS=3V, IDS=0.5IDSS
(GHz)
0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00
lS11l
0.823 0.815 0.808 0.805 0.799 0.801 0.797 0.798 0.801 0.795 0.799 0.794 0.801 0.795 0.792 0.793 0.790 0.791 0.787 0.789 0.785 0.781 0.790 0.785
ANG
-124.08 -132.50 -139.69 -145.83 -151.61 -156.12 -160.71 -164.76 -168.30 -171.96 -175.00 -177.52 179.69 177.19 175.03 172.48 170.02 168.28 166.13 164.32 161.82 160.26 157.97 156.36
lS21l
6.597 5.940 5.432 4.975 4.589 4.265 3.973 3.711 3.500 3.277 3.124 2.952 2.838 2.685 2.576 2.475 2.383 2.297 2.216 2.161 2.080 2.014 1.982 1.934
ANG
106.16 100.82 96.62 92.04 87.95 84.98 81.12 78.13 75.17 71.97 69.30 66.88 64.24 61.61 59.56 57.27 54.65 52.68 50.29 48.22 45.62 43.73 41.42 39.43
lS12l
0.038 0.039 0.044 0.045 0.048 0.049 0.051 0.053 0.056 0.058 0.060 0.062 0.065 0.067 0.070 0.072 0.074 0.078 0.079 0.084 0.087 0.089 0.092 0.096
ANG
47.22 45.96 46.57 44.56 44.03 44.90 43.79 42.66 42.80 42.28 42.45 42.19 42.39 42.03 41.59 40.83 40.43 40.49 40.14 39.04 37.82 35.77 36.24 35.76
lS22l
0.312 0.328 0.332 0.338 0.337 0.347 0.346 0.351 0.358 0.359 0.360 0.359 0.367 0.366 0.367 0.364 0.365 0.365 0.362 0.368 0.365 0.368 0.373 0.368
ANG
-169.26 -171.51 -174.06 -175.87 -176.95 -178.61 179.70 179.33 177.29 175.88 175.12 175.17 174.20 173.35 172.36 172.87 171.46 171.47 170.35 170.59 168.67 168.15 167.53 167.48
S-MAGN AND ANGLES VDS=5V, IDS=0.5IDSS
(GHz)
0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00
lS11l
0.813 0.805 0.798 0.793 0.788 0.790 0.788 0.788 0.791 0.785 0.789 0.785 0.791 0.786 0.783 0.785 0.783 0.783 0.780 0.782 0.778 0.774 0.784 0.780
ANG
-123.01 -131.28 -138.59 -144.68 -150.52 -154.88 -159.51 -163.52 -167.06 -170.83 -173.75 -176.28 -179.01 178.30 176.23 173.68 171.30 169.60 167.40 165.67 163.14 161.58 159.37 157.92
lS21l
7.231 6.524 5.973 5.464 5.022 4.667 4.351 4.064 3.833 3.602 3.415 3.224 3.089 2.924 2.797 2.686 2.584 2.489 2.391 2.328 2.245 2.174 2.131 2.078
ANG
105.37 99.90 95.56 90.88 86.66 83.43 79.39 76.38 73.20 69.90 66.98 64.49 61.64 58.97 56.71 54.27 51.51 49.42 46.84 44.64 41.93 39.88 37.44 35.38
lS12l
0.034 0.035 0.037 0.040 0.042 0.043 0.044 0.046 0.048 0.049 0.051 0.052 0.055 0.058 0.059 0.061 0.063 0.065 0.067 0.071 0.073 0.075 0.077 0.080
ANG
46.83 45.34 43.94 42.73 42.30 43.74 41.95 42.40 42.93 43.39 42.59 42.94 43.14 42.04 42.29 42.34 42.05 41.48 41.31 41.28 41.12 38.67 39.47 39.14
lS22l
0.170 0.183 0.186 0.193 0.199 0.205 0.205 0.217 0.222 0.224 0.230 0.237 0.247 0.251 0.254 0.259 0.263 0.269 0.269 0.281 0.279 0.286 0.294 0.295
ANG
-136.95 -141.01 -145.96 -147.75 -148.75 -151.81 -152.16 -153.57 -155.52 -155.74 -157.08 -156.84 -158.26 -159.44 -159.80 -158.82 -160.00 -159.37 -160.21 -160.04 -160.84 -161.38 -161.26 -160.85
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.

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