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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4106
DESCRIPTION *High Collector-Emitter Breakdown Voltage : V(BR)CEO= 400V(Min.) *High Switching Speed *Wide Area of Safe Operation
APPLICATIONS *Designed for switching regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
w w
scs .i w
500 400 7 7 14 3 50
V
V
.cn mi e
V
A
ICM
Collector Current-Peak
A
IB
B
Base Current-Continuous
A
Collector Power Dissipation@TC=25 PC Collector Power Dissipation@Ta=25
W 1.75
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Gurrent Gain DC Gurrent Gain CONDITIONS IC= 5mA ; RBE= IC= 1mA ; IE= 0 IE= 1mA ; IC= 0 IC= 4A; IB= 0.8A
B
2SC4106
MIN 400 500 7
TYP.
MAX
UNIT V V V
0.8 1.5 10 10 50
V V A A
IC= 4A; IB= 0.8A
B
VCB= 400V; IE= 0
Current-Gain--Bandwidth Product Output Capacitance
Switching times ton tstg tf
w w
w.
.cn mi cse is
VEB= 5V; IC=0 IC= 0.8A ; VCE= 5V 15 IC= 4A ; VCE= 5V 10 IC= 10mA ; VCE= 5V 10 IC= 0.8A ; VCE= 10V IE= 0;VCB= 10V; ftest= 1.0MHz IC= 5A ;IB1= 1A; IB2= -2A RL= 40; VCC= 200V
20 80
MHz pF
Turn-on Time Storage Time Fall Time
0.5 2.5 0.3
s s s
hFE-1 Classifications L 15-30 M 20-40 N 30-50
isc Websitewww.iscsemi.cn
2


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