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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3352 DESCRIPTION With TO-220Fa package High voltage High speed switching APPLICATIONS For high speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage CHA IN Collector current Base current Collector-emitter voltage Emitter-base voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC VALUE 800 500 7 1.5 3.0 0.5 UNIT V V V A A A Open collector Collector current-Peak TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 25 W 2 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V 15 8 MIN 500 2SC3352 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 1.0 1.5 0.1 0.1 V V mA mA Switching times ton tstg tf Fall time CHA IN Storage time Turn-on time E SEM NG OND IC TOR UC 2.5 1.0 3.0 1.0 MHz |I |I |I s s s IC=1A; IB1=-IB2=0.2A VCC=200V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3352 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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