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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1185 DESCRIPTION *With TO-3PN package *High current capability *Low collector saturation voltage APPLICATIONS *High power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -50 -50 -5 -7 -15 -5 60 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-0.1A ;IB=0 IC=-7A; IB=-0.7A IC=-7A ; VCE=-5V VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 60 20 MIN -50 2SA1185 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 Cob fT TYP. MAX UNIT V -0.8 -1.5 -1 -2 320 V V mA mA 250 100 pF MHz hFE-1 Classifications Q 60-120 P 100-200 O 160-320 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1185 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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