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| DC COMPONENTS CO., LTD. R 2N3906 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. TO-92 Pinning 1 = Emitter 2 = Base 3 = Collector .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -40 -40 -5 -200 625 +150 -55 to +150 Unit V V V mA mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICEX (1) Min -40 -40 -5 -0.65 60 80 100 60 30 250 2% Typ - Max -50 -0.25 -0.4 -0.85 -0.95 300 4 Unit V V V nA V V V V MHz pF Test Conditions IC=-10A, IE=0 IC=-1mA, IB=0 IE=-10A, IC=0 VCE=-30V, VBE=-3V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-0.1mA, VCE=-1V IC=-1mA, VCE=-1V IC=-10mA, VCE=-1V IC=-50mA, VCE=-1V IC=-100mA, VCE=-1V IC=-10mA, VCE=-20V, f=100MHz VCB=-5V, f=1MHz, IE=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (1) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 DC Current Gain (1) hFE3 hFE4 hFE5 Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width fT Cob 380s, Duty Cycle |
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