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S T M6915
S amHop Microelectronics C orp. Dec, 12 2006
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
30V
F E AT UR E S S uper high dense cell design for low R DS (ON).
ID
8.5A
R DS (ON) ( m i ) Max
19 @ V G S = 10V 28 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage.
D1
8
D1
7
D2
6
D2
5
S O-8 1
1 2 3 4
S1
G1 S 2
G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter Drain-S ource Voltage G ate-S ource Voltage Drain C urrent-C ontinuous @ T a -P ulsed
b a
S ymbol VDS VG S 25 C 70 C IDM IS PD ID
N-Channel 30 20 8.5 6.5 40 1.7 2 1.44
Unit V V A A A A W C
Drain-S ource Diode F orward C urrent a Maximum P ower Dissipation a Operating J unction and S torage Temperature R ange T a= 25 C T a=70 C
TJ, TS TG
-55 to -150
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA 62.5 C /W
1
S T M6915
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS
c
S ymbol
Condition
VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 8A VGS = 4.5V,ID = 5A VDS = 5V, VGS = 10V VDS = 5V, ID = 6A
Min Typ C Max Unit
30 1 V uA 100 nA 1 1.8 16 22 15 13
770
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 3
19
28
V
m ohm m ohm
A S
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance Output Capacitance R everse Transfer Capacitance
CISS COSS CRSS
c
VDS =15V, VGS = 0V f =1.0MHZ
PF PF PF
160
95 14 16
16.5
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Qgs Qgd
2
VDD = 15V, ID = 1A, VGS = 10V, R GE N = 6 ohm
R L = 15 ohm
ns ns ns ns nC nC nC nC
29 14.6 7.9 2.2 3.5
VDS =15V, ID =8A,VGS =10V VDS =15V, ID =8A,VGS =4.5V VDS =15V, ID = 8A, VGS =4.5V
S T M6915
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
VSD
Condition
VGS = 0V, Is =1.7A
Min Typ Max Unit
0.82 1.2 V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing.
50
V G S =10V
15
V G S =4.5V
V G S =4V
40
12
ID, Drain C urrent(A)
ID, Drain C urrent (A)
T j=125 C
30
V G S =3.5V
9
-55 C
20
V G S =3V V G S =2.5V
6
25 C
10
3 0 0.0
0 0 0.5 1 1.5 2 2.5 3
0.8
1.6
2.4
3.2
4.0
4.8
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
F igure 2. Trans fer C haracteris tics
36
1.75
R DS (ON), On-R es is tance Normalized
30
1.60 1.45 1.30 1.15 1.00 0.85
V G S =10V ID=8A
V G S =4.5V ID=5A
R DS (on) (m )
V G S =4.5V
24 18
V G S =10V
12 6 1
1
10
20
30
40
50
0
25
50
75
100
125
150
T j( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3
F igure 4. On-R es is tance Variation with Drain C urrent and Temperature
S T M6915
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.20 ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
48
F igure 6. B reakdown V oltage V ariation with T emperature
20.0
ID=8A
Is , S ource-drain current (A)
40
25 C 75 C 125 C
10.0 5.0
R DS (on) (m )
32 24 16 8 0
25 C
125 C
75 C
1.0
0 2 4 6 8 10
0
0.3
0.6
0.9
1.2
1.5
V G S , G ate-S ource Voltage (V )
V S D, B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs . G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
4
S T M6915
V G S , G ate to S ource V oltage (V )
1200 1000
10 8 6 4 2 0 VDS =15V ID=8A
C , C apacitance (pF )
C is s
800 600 400
C os s
6
200
C rs s
0 0 5 10 15 20 25 30
0
2
4
6
8
10
12
14 16
V DS , Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
250
Tr
50 10
ON S( )L im
it
10
S witching T ime (ns )
ID, Drain C urrent (A)
100 60
Tf
TD(off)
R
D
10
1s
ms
0m
s
10
TD(on)
1
DC
V DS =15V ,ID=1A
0.1 0.03
1 1
V G S =10V
VGS =10V S ingle P ulse T A=25 C 0.1 1
10
40
6 10
60 100 300 600
R g, G ate R es is tance ()
V DS , Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
9
F igure 12. Maximum S afe O perating Area
Normalized Transient
Thermal Resistance
1
0.5 0.2 0.1
0.1
P DM 0.05 t1 0.02 0.01 1. 2. 3. 4. t2 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2
0.01 0.00001 0.0001
Single Pulse
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
5
S T M6915
PAC K AG E OUT LINE DIME NS IONS S O-8
1 L
E D
0.015X45
A
0.008 TYP.
e
0.05 TYP.
B
0.016 TYP.
A1
C
H
MILLIME T E R S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0
INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8
10
S T M6915
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:
PACKAGE SOP 8N 150 A0
6.40
B0
5.20
K0
2.10
D0
1.5 (MIN)
D1
1.5 + 0.1 - 0.0
E
12.0 0.3
E1
1.75
E2
5.5 0.05
P0
8.0
P1
4.0
P2
2.0 0.05
T
0.3 0.05
SO-8 Reel
UNIT:
TAPE SIZE
12
REEL SIZE
330
M
330 1
N
62 1.5
W
12.4 + 0.2
W1
16.8 - 0.4
H
12.75 + 0.15
K
S
2.0 0.15
G
R
V
11

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