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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJL21193 DESCRIPTION *With TO-3PL package *Complement to type MJL21194 *Excellent gain linearity APPLICATIONS *Designed for high power audio output,disk head positioners and linear applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector MAX -400 -250 -5 -16 -30 -5 200 -65~150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 0.7 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN MJL21193 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-100mA ;IB=0 -250 V VCE(sat)-1 VCE(sat)-2 VBE(ON) Collector-emitter saturation voltage IC=-8A; IB=-0.8A -1.4 V Collector-emitter saturation voltage IC=-16A; IB=-3.2A -4.0 V Base-emitter on voltage IC=-8A ; VCE=-5V -2.2 V ICEX Collector cut-off current VCE=-250V; VBE(off)=-1.5V VCE=-200V; IB=0 -100 A ICEO Collector cut-off current -100 A IEBO Emitter cut-off current VEB=-5V; IC=0 -100 A hFE-1 DC current gain IC=-8A ; VCE=-5V 25 75 hFE-2 DC current gain IC=-16A ; VCE=-5V 8 fT Transition frequency IC=-1A ; VCE=-10V,f=1MHz 4 MHz COB Collector output capacitance f=1MHz;VCB=-10V,IE=0 500 pF 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE MJL21193 Fig.2 Outline dimensions (unindicated tolerance:0.50 mm) 3 |
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