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| HiPerFETTM Power MOSFETs Q-Class IXFH 32N50Q IXFT 32N50Q VDSS ID25 RDS(on) 500 V 32 A 0.16 500 V 32 A 0.16 trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C; pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 500 500 20 30 32 128 32 45 1500 5 416 -55 ... + 150 150 -55 ... + 150 V V V V A A A mJ mJ V/ns W C C C C Nm/lb.in. g g TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 300 1.13/10 6 4 Features IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages Easy to mount Space savings High power density Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2.5 4.5 100 TJ = 25C TJ = 125C 100 1 0.16 V V nA A mA VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 uA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 (c) 2004 IXYS All rights reserved DS98596E(02/04) IXFH 32N50Q IXFT 32N50Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 18 28 3950 4925 VGS = 0 V, VDS = 25 V, f = 1 MHz 640 210 35 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 (External), 42 75 20 153 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 26 85 800 260 45 50 95 25 190 32 105 0.30 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. A A1 A2 b b1 b2 C D E e L L1 P Q R S Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC 1 2 3 TO-247 AD (IXFH) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, Note 1 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 32 128 1.5 250 A A V ns C A TO-268 Outline Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 IF = IS, -di/dt = 100 A/s, VR = 100 V 0.75 7.5 Note 1: Pulse test, t 300 s, duty cycle d 2 % Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXFH 32N50Q IXFT 32N50Q Figure 1. Output Characteristics at 25OC 80 70 60 TJ = 25OC VGS=10V 9V 8V 7V 6V Figure 2. Output Characteristics at 125OC 50 TJ = 125OC VGS= 9V 8V 7V 6V 40 ID - Amperes 50 40 30 20 10 0 ID - Amperes 30 5V 20 10 4V 5V 0 4 8 12 16 20 0 0 4 8 12 16 20 VDS - Volts VDS - Volts Figure 3. RDS(on) normalized to 15A/25OC vs. ID 2.8 VGS = 10V Figure 4. RDS(on) normalized to 15A/25OC vs. TJ 2.8 VGS = 10V RDS(ON) - Normalized Tj=1250 C RDS(ON) - Normalized 2.4 2.0 1.6 2.4 ID = 32A 2.0 1.6 1.2 0.8 25 ID = 16A Tj=250 C 1.2 0.8 0 10 20 30 40 50 60 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 5. Drain Current vs. Case Temperature 40 IXF_32N50Q 32 Figure 6. Admittance Curves 50 40 ID - Amperes 24 16 8 0 ID - Amperes IXF_30N50Q 30 20 10 0 TJ = 125oC TJ = 25oC -50 -25 0 25 50 75 100 125 150 2 3 4 5 6 TC - Degrees C VGS - Volts (c) 2004 IXYS All rights reserved IXFH 32N50Q IXFT 32N50Q Figure 7. Gate Charge 14 12 10 Vds=300V ID=16A IG=10mA Figure 8. Capacitance Curves 10000 Ciss F = 1MHz 8 6 4 2 0 0 50 100 150 200 250 Capacitance - pF VGS - Volts 1000 Coss Crss 100 0 5 10 15 20 25 Gate Charge - nC Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 VGS= 0V VDS - Volts 80 ID - Amperes 60 40 20 TJ=25OC TJ=125OC 0 0.4 0.6 0.8 1.0 1.2 VSD - Volts Figure 10. Transient Thermal Resistance 0.40 0.20 R(th)JC - K/W 0.10 0.08 0.06 0.04 0.02 0.01 -3 10-2 IXYS reserves10 right to change limits, test conditions, and dimensions. the IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 10-1 100 101 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 |
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