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| Ordering number : ENA0424 FW340 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW340 Features * * General-Purpose Switching Device Applications * For motor drives, inverters. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage contained in a single package. High-density mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW10s) Drain Current (PW100ms) Drain Current (PW10s) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID ID IDP PD PT Tch Tstg Duty cycle1% Duty cycle1% Duty cycle1% Mounted on a ceramic board (2000mm2!0.8mm)1unit, PW10s Mounted on a ceramic board (2000mm2!0.8mm), PW10s Conditions N-channel 30 20 5 5.5 7 20 1.8 2.2 150 --55 to +150 P-channel -30 20 --5 --5.5 --9 -20 Unit V V A A A A W W C C Electrical Characteristics at Ta=25C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=10V ID=3A, VGS=4.5V ID=3A, VGS=4V 30 1 10 1.2 3.3 5.5 37 56 64 48 78 90 2.6 V A A V S m m m Symbol Conditions Ratings min typ max Unit Marking : W340 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82306 / 62006PA MS IM TB-00002412 No. A0424-1/6 FW340 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=16V, VDS=0V VDS=--10V, ID=-1mA VDS=--10V, ID=-5A ID=--5A, VGS=--10V ID=--3A, VGS=--4.5V ID=--3A, VGS=--4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-10V, ID=--5A VDS=--10V, VGS=-10V, ID=--5A VDS=--10V, VGS=-10V, ID=--5A IS=--5A, VGS=0V --30 --1 10 --1.2 4.5 7.5 41 62 70 1000 195 150 13 82 87 55 16.5 2.5 2.5 --0.85 --1.5 53 87 98 --2.6 V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A IS=5A, VGS=0V Ratings min typ 460 95 75 11 20 30 20 8.6 2.0 1.6 0.9 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm 7005-003 Electrical Connection 8 8 5 0.3 7 6 5 1 4 0.43 0.2 5.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view 4.4 6.0 1 2 3 4 0.595 1.27 0.1 1.5 1.8 MAX No. A0424-2/6 FW340 Switching Time Test Circuit [N-channel] VIN 10V 0V VIN ID=5A RL=3 VDD=15V [P-channel] VIN 0V --10V VIN VOUT VDD= --15V ID= --5A RL=3 D PW=10s D.C.1% D PW=10s D.C.1% VOUT G G FW340 P.G 50 FW340 P.G 50 S S 5 ID -- VDS 10.0V 8.0V 6.0V [Nch] 10 9 8 ID -- VGS [Nch] VDS=10V 4.0V V 3.5 4 3.0 V Drain Current, ID -- A Drain Current, ID -- A 2.5V 7 6 5 4 3 2 1 3 2 1 VGS=2.0V 0 0 0.2 0.4 0.6 0.8 1.0 IT04957 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Drain-to-Source Voltage, VDS -- V 140 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 140 --25 Ta=7 5C C 25C IT04958 [Nch] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m RDS(on) -- Ta [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- m 120 120 100 100 80 ID=3A 5A 80 A I D=3 60 =4.0 , VGS V V 60 A I D=3 =4.5 , VGS 40 40 , VG I D=5A 0.0V S=1 20 0 0 2 4 6 8 10 12 14 16 20 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT11087 Ambient Temperature, Ta -- C IT11088 No. A0424-3/6 FW340 10 yfs -- ID VDS=10V [Nch] 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 IS -- VSD Forward Transfer Admittance, yfs -- S 7 5 3 2 [Nch] VGS=0V 1.0 7 5 3 2 0.1 0.01 2 3 C 5 --2 a= C C T 75 25 Source Current, IS -- A 57 0.1 2 3 57 1.0 2 3 Drain Current, ID -- A 100 10 IT11089 57 0 0.2 0.4 Ta= 75C 25C --25 C 0.6 0.8 1.0 1.2 1.4 IT04962 SW Time -- ID [Nch] Switching Time, SW Time -- ns 7 VDD=15V VGS=10V Ciss, Coss, Crss -- pF 1000 7 5 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V [Nch] f=1MHz 5 3 2 td (off) 3 2 tf 100 7 5 Coss Crss tr 10 0.1 2 3 5 7 1.0 2 td(on) 3 5 10 IT04963 7 3 0 5 10 15 20 25 30 IT11090 Drain Current, ID -- A 10 9 VGS -- Qg Drain-to-Source Voltage, VDS -- V 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 [Nch] ASO [Nch] PW10s 100 s 1m s 10 Gate-to-Source Voltage, VGS -- V VDS=10V ID=5A Drain Current, ID -- A IDP=20A ID=5A 10 0m 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 ms s DC Operation in this area is limited by RDS(on). op 10 s era tio n 0.01 0.1 Ta=25C Single pulse Mounted on a ceramic board (2000mm2!0.8mm) 1unit 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Total Gate Charge, Qg -- nC --5.0 IT11091 ID -- VDS 0V 5V Drain-to-Source Voltage, VDS -- V --10 IT11092 [Pch] ID -- VGS [Pch] VDS= --10V --9 --8 --10 . --4.0 V Drain Current, ID -- A 0V --3 . Drain Current, ID -- A --6. 0 5V -4. --7 --6 --5 --3.0 --3.0V --4 . --3 --2 --1 --1.0 VGS= --2.5V 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Drain-to-Source Voltage, VDS -- V IT07390 Gate-to-Source Voltage, VGS -- V 25 C Ta=7 5C --25 C --2.0 --4 IT11093 No. A0424-4/6 FW340 140 RDS(on) -- VGS ID= --5A [Pch] Ta=25C 140 RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- m 120 Static Drain-to-Source On-State Resistance, RDS(on) -- m 120 ID= --3A 100 100 80 80 60 60 40 40 V = --4 , VGS --3A I D= .5V = --4 , VGS --3A I D= --10V V S= --5A, G I D= 20 0 0 --2 --4 --6 --8 --10 --12 --14 --16 20 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 yfs -- ID IT07392 Ambient Temperature, Ta -- C --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IT07393 [Pch] IS -- VSD [Pch] VGS=0V Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS= --10V 5C 25C 1.0 7 5 3 2 C 25 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 3 2 5 7 --10 IT11094 --0.01 --0.2 --0.4 Ta= 7 C 75 --0.6 --25 C --0.8 = Ta --2 C 5 Source Current, IS -- A --1.0 --1.2 IT07395 SW Time -- ID VDD= --15V VGS= --10V td(off) [Pch] 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V [Pch] f=1MHz Switching Time, SW Time -- ns Ciss, Coss, Crss -- pF 100 7 5 3 2 1000 7 5 3 2 Ciss tf tr Coss Crss 10 7 5 3 --0.1 td(on) 100 7 5 2 3 5 7 --1.0 2 3 5 Drain Current, ID -- A --10 --9 --10 IT07396 7 0 --5 --10 --15 --20 --25 --30 IT07397 Drain-to-Source Voltage, VDS -- V 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 VGS -- Qg VDS= --10V ID= --5A [Pch] ASO IDP= --20A ID= --5A [Pch] PW10s Gate-to-Source Voltage, VGS -- V --8 1m 10 ms --7 --6 --5 --4 --3 --2 --1 0 0 2 4 6 8 10 12 14 16 18 Drain Current, ID -- A s 10 0 s 10 10 op era 0m s Operation in this area is limited by RDS(on). DC s n tio --0.01 --0.1 Ta=25C Single pulse Mounted on a ceramic board (2000mm2!0.8mm) 1unit 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 Total Gate Charge, Qg -- nC IT07398 Drain-to-Source Voltage, VDS -- V IT11095 No. A0424-5/6 FW340 Allowable Power Dissipation(FET 1), PD -- W 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 PD(FET 1) -- PD(FET 2) Mounted on a ceramic board PW10s [Nch, Pch] Allowable Power Dissipation, PD -- W (2000mm2!0.8mm), 2.5 2.2 2.0 1.8 1.5 [Nch, Pch] Mounted on a ceramic board (2000mm2!0.8mm), PW10s PD -- Ta To t al di ss 1.0 1u ip ni ati t on 0.5 0 0 20 40 60 80 100 120 140 160 Allowable Power Dissipation(FET 2), PD -- W IT11096 Ambient Temperature, Ta -- C IT11097 Note on usage : Since the FW340 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2006. Specifications and information herein are subject to change without notice. PS No. A0424-6/6 |
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