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| MITSUBISHI IGBT MODULES CM100DY-34A HIGH POWER SWITCHING USE CM100DY-34A IC ................................................................... 100A VCES ......................................................... 1700V Insulated Type 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 17 23 23 17 C2E1 E2 C1 E2 G2 4 G1 E1 12 2-6.5 MOUNTING HOLES 12 800.25 12 4 3-M5 NUTS 12.5 (SCREWING DEPTH) 20 (14) 48 13 18 4 TAB #110. t=0.5 16 7 16 7 16 7.5 C2E1 E2 C1 29 +1 -0.5 LABEL CIRCUIT DIAGRAM G1 E1 21.2 E2 G2 Jun. 2007 MITSUBISHI IGBT MODULES CM100DY-34A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (Tj = 25C, unless otherwise specified) Conditions G-E Short C-E Short DC, TC = 108C*1 Pulse Operation Pulse TC = 25C*1 (Note 2) (Note 2) (Note 2) (Note 2) Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Main terminal to base plate, AC 1 min. Main terminal M5 Mounting holes M6 Typical value Ratings 1700 20 100 200 100 200 960 -40 ~ +150 -40 ~ +125 3500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A W C C V N*m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter (Tj = 25C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 10mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 100A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 1000V, IC = 100A, VGE = 15V VCC = 1000V, IC = 100A VGE1 = VGE2 = 15V RG = 4.8, Inductive load switching operation IE = 100A IE = 100A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to fin, Thermal compound applied (1/2 module)*1,*2 Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance Min. -- 5.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.8 Limits Typ. -- 7.0 -- 2.2 2.45 -- -- -- 670 -- -- -- -- -- 10 -- -- -- 0.022 -- Max. 1 8.5 2.0 2.8 -- 24.7 2.8 0.53 -- 200 150 550 350 300 -- 3.0 0.13 0.21 -- 48 Unit mA V A V nF nC ns C V C/W *1 : Tc, Tf measured point is just under the chips. *2 : Typical value is measured by using Shin-Etsu Chemical Co.,Ltd "G-746". Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Jun. 2007 2 MITSUBISHI IGBT MODULES CM100DY-34A HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS 200 Tj = 25C COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS 200 12 COLLECTOR CURRENT IC (A) VCE = 10V 160 160 VGE = 20V 15 13 120 11 120 80 10 40 8 0 0 2 4 6 8 9 10 80 40 Tj = 25C Tj = 125C 0 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS 10 Tj = 25C 5 VGE = 15V 4 8 3 6 IC = 200A IC = 100A 2 4 1 Tj = 25C Tj = 125C 0 0 50 100 150 200 2 IC = 40A 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS 103 7 CAPACITANCE-VCE CHARACTERISTICS 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 EMITTER CURRENT IE (A) 5 3 2 Tj = 25C Tj = 125C Cies 101 7 5 3 2 102 7 5 3 2 100 7 5 3 2 Coes 101 0.5 1 1.5 2 2.5 3 3.5 4 Cres VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Jun. 2007 3 MITSUBISHI IGBT MODULES CM100DY-34A HIGH POWER SWITCHING USE SWITCHING TIME td(on), tr, td(off), tf (ns) 7 5 3 2 tf td(off) 102 7 5 3 2 td(on) tr Conditions: VCC = 1000V VGE = 15V RG = 4.7 Tj = 125C Inductive load 2 3 5 7 102 2 3 5 7 103 SWITCHING TIME td(on), tr, td(off), tf (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. COLLECTOR CURRENT 103 HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. GATE RESISTANCE 103 7 Conditions: 5 VCC = 1000V 3 VGE = 15V 2 IC = 100A 102 Tj = 125C 7 Inductive load 5 tf td(off) 3 2 101 7 5 3 2 101 7 5 3 2 td(on) tr 100 1 10 100 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG () SWITCHING LOSS Eon, Eoff, Err (mJ/pulse) 103 7 5 3 2 SWITCHING LOSS Eon, Eoff, Err (mJ/pulse) SWITCHING LOSS vs. COLLECTOR CURRENT Conditions: VCC = 1000V VGE = 15V RG = 4.7 102 Tj = 125C 7 Inductive load 5 3 2 SWITCHING LOSS vs. GATE RESISTANCE 103 Conditions: VCC = 1000V VGE = 15V 3 IC = 100A Tj = 125C 2 Inductive load 7 5 Err Eoff Eon 102 7 5 3 2 Eon 101 7 5 3 2 Eoff Err 2 3 5 7 101 2 3 5 7 102 100 1 10 2 3 5 7 102 2 3 5 7 103 101 0 10 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG () REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (ratio) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE 103 7 5 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 100 7 5 3 2 10-1 7 5 3 2 102 7 5 3 2 trr Irr Conditions: VCC = 1000V VGE = 15V RG = 4.7 Tj = 25C Inductive load 2 3 5 7 102 2 3 5 7 103 Single Pulse Tc= 25C Tc measured point is just under the chips 10-2 7 5 IGBT part: 3 Per unit base = Rth(j-c) = 0.13C/W 2 FWDi part: 101 1 10 Per unit base = Rth(j-c) = 0.21C/ W 10-3 10-52 3 5710-42 3 5710-32 3 5710-22 3 5710-12 3 57100 2 3 57101 TIME (s) EMITTER CURRENT IC (A) Jun. 2007 4 MITSUBISHI IGBT MODULES CM100DY-34A HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS 20 GATE-EMITTER VOLTAGE VGE (V) IC = 100A 16 VCC = 800V VCC = 1000V 12 8 4 0 0 200 400 600 800 1000 GATE CHARGE QG (nC) Jun. 2007 5 |
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