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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5358
DESCRIPTION With TO-3P(I) package Complement to type 2SA1986 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION
Absolute maximum ratings(Tc=25ae )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER
TOR NDU ICO E SEM ANG INCH
CONDITIONS VALUE 230 Collector-base voltage Open emitter Collector-emitter voltage Open base 230 5 Emitter-base voltage Open collector Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 15 1.5 150 150 -55~150
UNIT V V V A A W ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=8 A;IB=0.8A IC=7A ; VCE=5V VCB=230V ;IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=1A ; VCE=5V IE=0; VCB=10V;f=1MHz 55 35 30 200 MIN 230 TYP.
2SC5358
SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB
MAX
UNIT V
3.0 1.5 5 5 160 |I |I
V V A A
MHz pF
hFE-1 classifications R 55-110 O
TOR NDU ICO E SEM ANG INCH
80-160
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC5358
TOR NDU ICO E SEM ANG INCH
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5358
TOR NDU ICO E SEM ANG INCH
4


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