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 2SC3127
Silicon NPN Epitaxial
REJ03G0711-0300 (Previous ADE-208-1080A) Rev.3.00 Aug.10.2005
Application
UHF/VHF wide band amplifier
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2
1. Emitter 2. Base 3. Collector
Note:
Marking for 2SC3127 is "ID-".
Absolute Maximum Ratings
(Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 12 3 50 150 150 -55 to +150 Unit V V V mA mW C C
Rev.3.00 Aug 10, 2005 page 1 of 7
2SC3127
Electrical Characteristics
(Ta = 25C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO V(BR)CEO IEBO ICBO hFE Cob fT PG NF Min 20 12 -- -- 30 -- 3.5 -- -- Typ -- -- -- -- 90 0.9 4.5 10.5 2.2 Max -- -- 10 0.5 200 1.5 -- -- -- Unit V V A A pF GHz dB dB Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = VEB = 3 V, IC = 0 VCB = 12 V, IE = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz
Rev.3.00 Aug 10, 2005 page 2 of 7
2SC3127
Main Characteristics
Maximum Collector Dissipation Curve
Collector Power Dissipation Pc (mW)
300
DC Current Transfer Ratio vs. Collector Current
200
VCE = 5 V
DC Current Transfer Ratio hFE
50 100 150 200
160
200
120
80
100
40
0
0 1 2 5 10 20 50 100
Ambient Temperature Ta (C) Gain Bandwidth Product vs. Collector Current
Collector Output Capacitance Cob (pF) Gain Bandwidth Product fT (GHz)
5.0
2.0
Collector Current IC (mA) Collector Output Capacitance vs. Collector to Base Voltage
4.0
1.6 f = 1 MHz IE = 0 1.2
3.0
2.0 VCE = 5 V f = 500 MHz
0.8
1.0
0.4
0 1 2 5 10 20 50
0 1 2 5 10 20 50
Collector Current IC (mA) Reverse Transfer Capacitance vs. Collector to Base Voltage
Reverse Transfer Capacitance Cre (pF)
2.0
Collector to Base Voltage VCB (V) Power Gain and Noise Figure vs. Collector Current
20
f = 1 MHz Emitter Common
Power Gain PG (dB) Noise Figure NF (dB)
1.6
16 PG 12 VCE = 5 V f = 500 MHz 8 NF
1.2
0.8
0.4
4
0 1 2 5 10 20 50
0 0 10 20 30 40 50
Collector to Base Voltage VCB (V)
Collector Current IC (mA)
Rev.3.00 Aug 10, 2005 page 3 of 7
2SC3127
Power Gain and Noise Figure vs. Collector Current
2nd I.M. Distortion vs. Collector Current
2nd I.M. Distortion 2nd I.M.D. (dB)
12
70
Power Gain PG (dB) Noise Figure NF (dB)
10
PG VCE = 5 V f = 900 MHz
60
8
50
6 NF 4
40
30
VCC = 12 V f1 = 210 MHz, f2 = 200 MHz Vout = 100 dB f2nd = 410 MHz 0 10 20 30 40 50
2 0 10 20 30 40 50
20
Collector Current IC (mA)
Collector Current IC (mA)
2nd I.M. Distortion vs. Collector Current
3rd I.M. Distortion vs. Collector Current
2nd I.M. Distortion 2nd I.M.D. (dB)
3rd I.M. Distortion 3rd I.M.D. (dB)
70
80
f = 190 MHz
60
70 f = 220 MHz 60
50
40
30
VCC = 12 V f1 = 600 MHz, f2 = 650 MHz Vout = 100 dB f2nd = 1,250 MHz 0 10 20 30 40 50
50
40
VCC = 12 V f1 = 210 MHz, f2 = 200 MHz Vout = 100 dB f3rd = 190 MHz, 220 MHz 0 10 20 30 40 50
20
30
Collector Current IC (mA)
Collector Current IC (mA)
3rd I.M. Distortion vs. Collector Current
3rd I.M. Distortion 3rd I.M.D. (dB)
70
f = 550 MHz
60 f = 700 MHz 50
40
30
VCC = 12 V f1 = 600 MHz, f2 = 650 MHz Vout = 100 dB f3rd = 550 MHz, 700 MHz 0 10 20 30 40 50
20
Collector Current IC (mA)
Rev.3.00 Aug 10, 2005 page 4 of 7
2SC3127
Noise Figure vs. Frequency
10 VCC = 12 V IC = 20 mA
Noise Figure NF (dB)
8 Post AMP. NF 6 NF
4
2
0 400
500
600
700
800
900
Frequency f (MHz)
Power Gain vs. Frequency
10
Power Gain PG (dB)
8 VCC = 12 V, IC = 20 mA Input Power Level -50 dBm
6
4
2
0
250
500
750
1,000
Frequency f (MHz)
Power Gain vs. Frequency
10
Power Gain PG (dB)
8 IC = 30 mA IC = 20 mA 4 VCC = 12 V Input Power Level -50 dBm IC = 10 mA IC = 5 mA
6
2
0
250
500
750
1,000
Frequency f (MHz)
Rev.3.00 Aug 10, 2005 page 5 of 7
2SC3127
Input and Output Reflection Coefficient vs. Frequency
Input and Output Reflection Coefficient S11&S22 (dB)
0 S22 -5
-10
S11
-15
VCC = 12 V, IC = 20 mA Input Power Level -50 dBm 0 250 500 750 1,000
-20
Frequency f (MHz)
Vhf to Uhf Wide Band Amp. Circuit 50 p 470
Input Rg = 50
50 p
50 p
5p T1 1,200 p Output
L1
L2
2.4 k
1.2 p 4,400 p
110 4,400 p 2.5 p
RL = 50
2,200 p
VBB
VCC
Unit R : C:F
Parts Spcecification L1 : Inside dia 3.0 mm, 0.4 mm Polyurethane Coated Copper wire 12 Turns. L2 : Inside dia 3.5 mm, 0.5 mm Polyurethane Coated Copper wire 9 Turns. T1 : Balance wind used Ferrite Core Outside dia 4.0 mm, Inside dia 2.0 mm 0.1 mm Polyurethane Coated Copper wire 3 Turns. Ratio Input to Output is 2 : 1
Rev.3.00 Aug 10, 2005 page 6 of 7
2SC3127
Package Dimensions
JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV MASS[Typ.] 0.011g
D e
A
Q
c
E
HE
L A A xM S A b
L1 A3 e
LP
Reference Symbol Dimension in Millimeters
A2
A
A1 S b b1 c b2 A-A Section
e1
c1
I1
Pattern of terminal position areas
A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q
Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25
Nom
1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8
Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05
1.95 0.3
Ordering Information
Part Name 2SC3127ID-TL-E Quantity 3000 Shipping Container 178 mm Reel, 8 mm Emboss Taping
Rev.3.00 Aug 10, 2005 page 7 of 7
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0


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