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  Datasheet File OCR Text:
 SMD Type
Silicon NPN Epitaxial Planar Type 2SC3125
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
Features
Good Lineality of fT
+0.1 1.3-0.1
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 25 4 50 25 150 125 -55 to +125 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Saturation Voltage Collector-Emitter Saturation Voltage Baser-Emitter Transition Frequency Collector Output Capacitance Collector-BaseTime Constant Symbol ICBO IEBO Testconditons VCB = 30V, IE = 0 VEB = 3V, IC = 0 25 20 70 200 0.2 1.5 VCE = 10 V, IC = 10mA VCC=10V,IE=0,f=1MHz VCB=10V,IC=1mA,f=30MHz 250 600 1.1 1.6 25 V V MHz pF ps Min Typ Max 0.1 1.0 Unit iA iA V
V(BR)CEO IC=10mA,IB=0 hFE VCE(sat) VBE(sat) fT Cob Cc.rbb' VCE = 10 V, IC = 10mA IC=15mA,IB=1.5mA
Marking
Marking HH
+0.1 0.38-0.1
0-0.1
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