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TOP247F 025001 200001 TF14N50 SD1030T 80N15 A1600 000950
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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2588
DESCRIPTION *With MT-200 package *Excellent safe operating area *Fast switching speed APPLICATIONS *Suited for high frequency power amplifiers, audio power amplifiers,switching regulators and DC-DC converters applications PINNING(see Fig.2)
PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION
*
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 130 130 5 12 120 150 -55~150 UNIT V V V A W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA; RBE= IC=50A; IE=0 IE=50A; IC=0 IC=5 A;IB=0.5 A IC=5A ; VCE=5V VCB=120V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=5V IC=7A ; VCE=5V IC=1A ; VCB=10V,f=1MHz IE=0; VCB=10V;f=1MHz 60 40 60 MIN 120 120 5
2SC2588
TYP.
MAX
UNIT V V V
1.8 1.7 50 50 200
V V A A
MHz pF
170
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2588
Fig.2 Outline dimensions
3


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