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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION *With TO-220C package *High collector breakdown voltage : VCEO=400V(Min) *Excellent switching time : tr=1.0s(Max.) : tf=1.0s(Max. APPLICATIONS *High speed high voltage switching applications *Switching regulator applications *High speed DC-DC converter applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2SC2534
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 6 2 0.5 1.5 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=0.5A; IB=50mA IC=0.5A; IB=50mA VCB=400V ;IE=0 VEB=6V; IC=0 IC=0.1A ; VCE=5V IC=0.5A ; VCE=5V 20 20 MIN 400 500 6
2SC2534
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
TYP.
MAX
UNIT V V V
1.0 1.5 100 1
V V A mA
Switching times tr tstg tf Rise time Storage time Fall time VCC=200V; IB1=-IB2=50mA;RL=400= Duty cycle?1% 1.0 2.5 1.0 s s s
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2534
Fig.2 Outline dimensions (unindicated tolerance:0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2534
4


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