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| TAK CHEONG (R) SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD TSTG TJ WIV IO IFM IFSURGE Power Dissipation TA = 25C unless otherwise noted Value 500 -65 to +150 +175 75 150 450 2 Units mW C C V mA mA A L DEVICE MARKING DIAGRAM Parameter Storage Temperature Range Operating Junction Temperature Working Inverse Voltage Average Rectified Current Non-repetitive Peak Forward Current Peak Forward Surge Current (Pulse Width = 1.0 second) L AW 76 : Logo These ratings are limiting values above which the serviceability of the diode may be impaired. Specification Features: Fast Switching Device (TRR <4.0 nS) DO-35 Package (JEDEC) Through-Hole Device Type Mounting Hermetically Sealed Glass Compression Bonded Construction All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable RoHS Compliant Solder Hot Dip Tin (Sn) Terminal Finish Cathode Indicated By Polarity Band ELECTRICAL SYMBOL Cathode Anode Electrical Characteristics Symbol BV IR TA = 25C unless otherwise noted Test Condition IR=5A VR=50V VR=50V TA = 150 75 100 100 1.0 4 nS 2 4 pF Limits Min Max Volts nA uA Volts Unit Parameter Breakdown Voltage Reverse Leakage Current VF TRR Forward Voltage Reverse Recovery Time IF=100mA IF=IR=10mA, RL=100, IRR=1mA IF= 10mA, VR=6V, RL=100, IRR=1mA C Capacitance VR=0V, f=1MHZ Number: DB-037 June 2008 / D Page 1 TCBAW76 TAK CHEONG Typical Characteristics 500 (R) SEM IC O N DU C TO R PD - Power Dissipation [mW] 1.5 Total Capacitance [pF] 400 300 200 100 0 0 25 50 75 100 125 150 175 200 f = 1MHz Ta = 25 1.0 0.5 0.0 0 5 10 15 20 25 30 Temperature [ ] VR - Reverse Voltage [V] Figure 1. Power Dissipation vs Ambient Temperature Valid provided leads at a distance of 0.8mm from case are kept at ambient temperature Figure 2. Total Capacitance 160 60 IR - Leakage Current [nA] BV - Reverse Voltage [V] Ta=25 150 50 40 30 20 10 0 Ta=25 140 130 120 110 1 10 100 IR - Reverse Current [uA] 10 VR - Reverse Voltage [V] 100 Figure 3. Reverse Voltage vs Reverse Current BV - 1.0uA to 100uA Figure 4. Reverse Current vs Reverse Voltage IR - 10V to 100V 1500 1400 Ta=25 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0.001 1000 VF - Forward Voltage [mV] VF - Forward Voltage (mV) 800 Ta= -40 Ta=25 400 Ta=65 Ta=125 200 600 0.100 10.000 IF - Forw ard Current [m A] 1000.000 0 0.01 0.1 1 10 IF - Forw ard Current (m A) 100 Figure 5. Forward Voltage vs Forward Current VF - 0.001mA to 800mA Figure 6. Forward Voltage vs Ambient Temperature VF - 0.01mA to 100mA (-40 to +125 Deg C) Number: DB-037 June 2008 / D Page 2 TAK CHEONG Package Outline Package (R) SEM IC O N DU C TO R Case Outline DO-35 DO-35 DIM Min Millimeters Max Min Inches Max A B C D 0.46 0.55 0.018 0.022 3.05 5.08 0.120 0.200 25.40 38.10 1.000 1.500 1.53 2.28 0.060 0.090 Notes: 1. 2. All dimensions are within JEDEC standard. DO35 polarity denoted by cathode band. Number: DB-037 June 2008 / D Page 3 TAK CHEONG (R) DISC LA I MER NOTIC E NOTICE The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com, or consult your nearest Tak Cheong's sales office for further assistance. Number: DB-100 April 14, 2008 / A |
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