 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AO3460 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3460/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected. AO3460 and AO3460L are electrically identical. -RoHS Compliant -AO3460L is Halogen Free Features VDS (V) = 60V ID = 0.65A (VGS = 10V) RDS(ON) < 1.7 (VGS = 10V) RDS(ON) < 2 (VGS = 4.5V) D1 TO-236 (SOT-23) Top View G D S S1 G1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Maximum VDS Drain-Source Voltage 60 VGS Gate-Source Voltage 20 Continuous Drain Current A, F Pulsed Drain Current Power Dissipation A TA=25C TA=70C B Units V V A 0.65 ID IDM PD 0.5 1.6 1.4 0.9 -55 to 150 W C TA=25C TA=70C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Symbol A A t 10s Steady-State Steady-State RJA RJL Typ 70 100 63 Max 90 125 80 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3460 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=60V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=250uA VGS=10V, VDS=5V VGS=10V, ID=0.65A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=0.5A Forward Transconductance VDS=5V, ID=0.65A Diode Forward Voltage IS=0.1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 1.6 1.4 2.5 1.6 0.8 0.8 1 1.2 22 VGS=0V, VDS=30V, f=1MHz 6 2 5.3 VGS=10V, VDS=30V, RL=75, RGEN=3 IF=0.65A, dI/dt=100A/s, VGS=-9V 2.8 19.7 5.5 11.3 7.5 14 27 1.7 3 2 2.2 Min 60 1 5 10 2.5 Typ Max Units V A A V A S V A pF pF pF ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) tf trr Qrr Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=0.65A, dI/dt=100A/s, VGS=-9V A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. Rev 1: May 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 6V 1.5 4.5V 10V 1 VDS=5V 0.8 ID (A) 1 4V ID(A) VDS=0V, VGS=10V VDS=VGS ID=250A 0.6 25C 0.4 0.5 3.5V 0.2 VGS=3.0V 125C 0 0 1 2 3 4 5 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics VGS(Volts) Figure 2: Transfer Characteristics 2.2 Normalized On-Resistance VGS=10V ID=0.65A VGS=4.5V ID=0.5 -40C 0 3 2.5 RDS(ON) () 1.8 2 VGS=4.5V 1.4 1.5 VGS=10V 1.0 1 0 0.5 1 1.5 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 4 ID=0.65A 3.5 3 RDS(ON) () 2.5 2 25C 1.5 1 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage IS (A) 125C 0.6 -50 0 50 100 150 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.4 0.8 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C -40C 125C Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=30V ID=0.65A Capacitance (pF) 30 25 20 15 10 5 0 0 10 20 30 40 50 60 VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss Ciss 8 VGS (Volts) 6 VDS=0V, VGS=10V VDS=VGS ID=250A 4 2 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Qg (nC) Figure 7: Gate-Charge Characteristics 10.000 20 1.000 10s 100s Power (W) 16 12 8 4 0 0.0001 TJ(Max)=150C TA=25C ID (Amps) 0.100 RDS(ON) limited DC 1ms 10ms 0.1s 1s 10s 0.010 TJ(Max)=150C TC=25C 0.001 0.01 0.1 1 VDS (Volts) 10 100 0.001 0.01 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=125C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Ton T Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
Price & Availability of AO3460
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |